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BZW50-68RL

STMicroelectronics

BZW50-68RL by STMicroelectronics

BZW50-68RL by STMicroelectronics is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 68V max reverse voltage and 5000W peak power dissipation. Ideal for transient suppression applications, it features a low 5uA reverse current and 3000pF diode capacitance.

Median Price

$1.365

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 73 parts In-Stock

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-

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$1.365

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73

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$1.365

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Distributors (In-Stock)

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Digiode

USA . 1,352 parts In-Stock

1+ parts

$3.819

100+ parts

-

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1,352

$3.819

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Vyrian

USA . 4,003 parts In-Stock

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4,003

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Anansix

USA . 469 parts In-Stock

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469

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 487 parts In-Stock

1+ parts

$0.150

100+ parts

-

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$0.135

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487

$0.150

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$0.135

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MKK Technologies

India . 488 parts In-Stock

1+ parts

$0.282

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488

$0.282

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DigiPath Technology Company

USA . 488 parts In-Stock

1+ parts

$0.282

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488

$0.282

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Native Components

USA . 889 parts In-Stock

1+ parts

$1.067

100+ parts

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889

$1.067

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Northwest PG Solutions

USA . 753 parts In-Stock

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$1.173

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753

$1.173

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Corphita

USA . 4,485 parts In-Stock

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$3.618

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4,485

$3.618

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Component Stockers USA

USA . 375 parts In-Stock

1+ parts

$99.990

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375

$99.990

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Parana Technologies

USA . 2,083 parts In-Stock

1+ parts

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$0.179

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2,083

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$0.179

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Perfect Parts

USA . 1,120 parts In-Stock

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1,120

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Overview

Protect your sensitive electronic devices with the BZW50-68RL Transient Suppression Device from STMicroelectronics. With a maximum clamping voltage of 157V and a minimum breakdown voltage of 75.6V, this diode offers reliable protection against transient voltage spikes. Its high-quality construction and UL Recognized reference standard ensure peace of mind for your applications. Trust STMicroelectronics for top-of-the-line technology that delivers unmatched performance and value to customers in need of robust transient suppression solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body ensures durability and resistance to various environmental factors, making this product a reliable choice for transient suppression.

Maximum Non Repetitive Peak Reverse Power Dissipation: 5000 W

With a high maximum power dissipation rating of 5000W, this device can effectively handle sudden surge currents without damage, providing robust transient suppression capabilities.

Maximum Reverse Current: 5 uA

The low maximum reverse current of 5uA indicates minimal leakage, enhancing the efficiency of transient suppression and ensuring reliable performance.

Package Shape: ROUND

The round package shape offers convenient installation and allows for optimal placement in various electronic circuits, contributing to the ease of integration of this transient suppression device.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175 °C, this device can withstand elevated temperature conditions, making it suitable for a wide range of applications where transient suppression is required.

Reference Standard: UL RECOGNIZED

Being UL recognized signifies that this transient suppression device meets industry standards for safety and performance, ensuring reliability and compliance with regulations.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode technology enhances the efficiency of transient suppression by quickly diverting excess voltage away from sensitive components, protecting them from damage.

Technical Specifications

Transient Suppression Devices BZW50-68RL attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

75.6 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

157 V

Config:

SINGLE

Minimum Diode Capacitance:

3000 pF

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

5000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

6.5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

68 V

Maximum Reverse Current:

5 uA

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BZW50-68RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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