Loading...

BZW50-150RL

STMicroelectronics

BZW50-150RL by STMicroelectronics

BZW50-150RL by STMicroelectronics is a unidirectional transient voltage suppressor diode, ideal for protecting circuits from voltage spikes. It features a max reverse power dissipation of 5000 W, breakdown voltage of 166 V, and operates up to 175 °C. Its compact design suits various electronic applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,118 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,118

-

-

-

-

Digiode

USA . 4,591 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,591

-

-

-

-

Anansix

USA . 2,127 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,127

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,619 parts In-Stock

1+ parts

$0.175

100+ parts

-

1k+ parts

$0.157

10k+ parts

-

1,619

$0.175

-

$0.157

-

Native Components

USA . 92 parts In-Stock

1+ parts

$0.311

100+ parts

-

1k+ parts

-

10k+ parts

$0.299

92

$0.311

-

-

$0.299

MKK Technologies

India . 787 parts In-Stock

1+ parts

$0.329

100+ parts

-

1k+ parts

-

10k+ parts

-

787

$0.329

-

-

-

DigiPath Technology Company

USA . 787 parts In-Stock

1+ parts

$0.329

100+ parts

-

1k+ parts

-

10k+ parts

-

787

$0.329

-

-

-

Northwest PG Solutions

USA . 1,011 parts In-Stock

1+ parts

$0.342

100+ parts

-

1k+ parts

-

10k+ parts

$0.302

1,011

$0.342

-

-

$0.302

AZTECH Wire

Italy . 161 parts In-Stock

1+ parts

$17.270

100+ parts

-

1k+ parts

-

10k+ parts

-

161

$17.270

-

-

-

Component Stockers USA

USA . 516 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

516

$99.990

-

-

-

Corphita

USA . 4,366 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,366

-

-

-

-

Parana Technologies

USA . 1,307 parts In-Stock

1+ parts

-

100+ parts

$0.209

1k+ parts

-

10k+ parts

-

1,307

-

$0.209

-

-

Overview

Elevate your designs with the BZW50-150RL from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This powerful transient suppression device ensures reliable protection against voltage spikes, enhancing the longevity and performance of your equipment. Its robust construction and high breakdown voltage make it ideal for various applications, ensuring peace of mind while delivering value and efficiency to your projects. Experience the exceptional quality and reliability only STMicroelectronics can provide!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection against environmental factors, ensuring a long-lasting product.

Config: SINGLE

The single configuration simplifies integration into circuits, making it an efficient choice for various applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 5000 W

A high power dissipation capability allows the device to handle significant voltage spikes, enhancing its reliability in transient suppression roles.

Package Shape: ROUND

The round package shape is compact and allows for easier placement on PCBs, optimizing space efficiency in design.

No. of Terminals: 2

Having two terminals facilitates simple connection and integration into various circuit configurations.

Package Style (Meter): LONG FORM

The long form package style provides flexibility in layout and design, aiding in efficient thermal management.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature suggests robust performance under demanding conditions, ensuring stability in various environments.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and reduces oxidation, promoting reliable electrical connections.

Terminal Position: AXIAL

The axial terminal position allows for easy PCB mounting and effective use of space in circuit design.

Case Connection: ISOLATED

Isolated case connection ensures safety and prevents malfunction caused by unintended grounding issues.

Maximum Power Dissipation: 6.5 W

This moderate power dissipation level balances performance and heat management, suitable for general transient suppression applications.

Minimum Breakdown Voltage: 166 V

A minimum breakdown voltage of 166 V ensures that the diode effectively protects sensitive components from overvoltage conditions.

Reference Standard: UL RECOGNIZED

Being UL recognized assures users of compliance with safety standards, enhancing trust and reliability in the product.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type ensures effective voltage suppression, providing better protection against transient voltage spikes.

Technology: AVALANCHE

Avalanche technology contributes to fast response times during voltage transients, improving overall circuit protection.

Terminal Form: WIRE

Wire terminal form allows for flexible connection methods, making the product adaptable in different applications.

Maximum Repetitive Peak Reverse Voltage: 150 V

A maximum repetitive peak reverse voltage of 150 V means the device can withstand frequent transients, ensuring durability.

Polarity: UNIDIRECTIONAL

Unidirectional polarity is ideal for applications that require one-way voltage suppression, simplifying design considerations.

Maximum Clamping Voltage: 269 V

A clamping voltage of 269 V ensures that even in extreme conditions, the device effectively limits voltage to protect sensitive components.

Diode Element Material: SILICON

Silicon is widely used in semiconductor devices for its excellent electrical properties, contributing to the reliability of the product.

Technical Specifications

Transient Suppression Devices BZW50-150RL attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

166 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

269 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

5000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

6.5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

150 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BZW50-150RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20