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BZW06-5V8RL

STMicroelectronics

BZW06-5V8RL by STMicroelectronics

STMicroelectronics BZW06-5V8RL is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 5.8V VRWM, 13.4V VC, and 4000pF Cj. It is used for transient suppression in applications requiring high power dissipation and low clamping voltage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

LIBRA Elektronik GmbH

Germany . 11,900 parts In-Stock

1+ parts

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11,900

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Vyrian

USA . 4,965 parts In-Stock

1+ parts

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4,965

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Anansix

USA . 1,959 parts In-Stock

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1,959

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Digiode

USA . 277 parts In-Stock

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277

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Zilex Electronics Inc.

Canada . 42 parts In-Stock

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42

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,138 parts In-Stock

1+ parts

$0.061

100+ parts

-

1k+ parts

$0.055

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2,138

$0.061

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$0.055

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MKK Technologies

India . 70 parts In-Stock

1+ parts

$0.114

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-

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70

$0.114

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DigiPath Technology Company

USA . 70 parts In-Stock

1+ parts

$0.114

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70

$0.114

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AZTECH Wire

Italy . 892 parts In-Stock

1+ parts

$18.270

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892

$18.270

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Component Stockers USA

USA . 526 parts In-Stock

1+ parts

$99.990

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526

$99.990

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Perfect Parts

USA . 53,760 parts In-Stock

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53,760

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Assy Fe

Spain . 36,000 parts In-Stock

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36,000

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Corphita

USA . 2,272 parts In-Stock

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2,272

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Northwest PG Solutions

USA . 1,410 parts In-Stock

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$4.012

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1,410

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$4.012

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Parana Technologies

USA . 1,214 parts In-Stock

1+ parts

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100+ parts

$0.073

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1,214

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$0.073

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Native Components

USA . 436 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$3.971

10k+ parts

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436

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$3.971

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Overview

Looking for reliable transient suppression devices? Look no further than the BZW06-5V8RL by STMicroelectronics. With a maximum clamping voltage of 13.4V and a minimum breakdown voltage of 6.45V, this diode offers unparalleled protection against voltage spikes. Manufactured with high-quality materials and advanced technology, this product is perfect for applications where precision and reliability are key. Trust STMicroelectronics to provide you with the best in transient suppression devices that offer unmatched value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides durability and protection to the internal components of the device, ensuring a longer lifespan.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high maximum non repetitive peak reverse power dissipation of 600 W, this device can effectively handle sudden spikes in power, making it suitable for transient suppression applications.

Maximum Clamping Voltage: 13.4 V

The maximum clamping voltage of 13.4 V ensures that the voltage across the device does not exceed this level during transient events, providing reliable protection to connected components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes in this device allows for efficient suppression of transient voltage spikes, safeguarding electronic equipment from damage.

Technology: AVALANCHE

The adoption of avalanche technology in this device enables it to withstand high energy transients by using controlled avalanche breakdown, enhancing its overall reliability and performance.

Technical Specifications

Transient Suppression Devices BZW06-5V8RL attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

6.45 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

13.4 V

Config:

SINGLE

Minimum Diode Capacitance:

4000 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.7 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

5.8 V

Maximum Reverse Current:

1000 uA

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BZW06-5V8RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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