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BZV47C11

STMicroelectronics

BZV47C11 by STMicroelectronics

BZV47C11 by STMicroelectronics is a Zener diode with 11V nominal reference voltage, 50mA test current, and 1uA reverse current. It operates in temperatures from -65 to 175 °C and has a max power dissipation of 2W. Ideal for applications requiring precise voltage regulation in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,198 parts In-Stock

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4,198

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ECAB

Sweden . 3,193 parts In-Stock

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3,193

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Anansix

USA . 2,130 parts In-Stock

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2,130

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Vyrian

USA . 167 parts In-Stock

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167

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,227 parts In-Stock

1+ parts

$0.028

100+ parts

-

1k+ parts

$0.025

10k+ parts

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1,227

$0.028

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$0.025

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MKK Technologies

India . 1,187 parts In-Stock

1+ parts

$0.052

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1,187

$0.052

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DigiPath Technology Company

USA . 1,187 parts In-Stock

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$0.052

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1,187

$0.052

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Northwest PG Solutions

USA . 576 parts In-Stock

1+ parts

$3.021

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576

$3.021

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Corphita

USA . 4,463 parts In-Stock

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4,463

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Parana Technologies

USA . 609 parts In-Stock

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$0.033

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609

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$0.033

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Native Components

USA . 385 parts In-Stock

1+ parts

-

100+ parts

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$2.664

10k+ parts

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385

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$2.664

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Overview

Get ready to experience top-notch quality and performance with the BZV47C11 Zener Diode by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers unparalleled reliability and durability in all their products. The BZV47C11 offers customers the value of precise voltage regulation, low reverse current, and high temperature resilience. Ideal for applications requiring stable voltage references, signal clamping, and surge suppression, this Zener diode is the perfect choice for your electronic projects. Elevate your designs with the BZV47C11 and enjoy the benefits of superior technology and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as body material makes the zener diode lightweight and durable, making it suitable for a wide range of applications.

Working Test Current: 50 mA

The high working test current of 50 mA ensures that the zener diode can handle a significant amount of current without getting damaged, making it reliable for various circuit designs.

Maximum Reverse Current: 1 uA

The low maximum reverse current of 1 uA indicates that the zener diode has excellent reverse leakage characteristics, ensuring stable performance in reverse bias conditions.

Maximum Voltage Tolerance: 5 %

The tight maximum voltage tolerance of 5% ensures precise voltage regulation, making this zener diode suitable for applications where accurate voltage control is required.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175 °C allows the zener diode to operate in demanding environments without overheating, ensuring reliable performance.

Nominal Reference Voltage: 11 V

The nominal reference voltage of 11 V provides a stable reference voltage for voltage regulation applications, making this zener diode a reliable choice for such circuits.

Technical Specifications

Zener Diodes BZV47C11 attributes and parameters. Explore more Zener Diodes devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

7 ohm

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

2 W

Qualification:

Not Qualified

Nominal Reference Voltage:

11 V

Maximum Reverse Current:

1 uA

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Temperature Coefficient:

6.6 mV/Cel

Maximum Voltage Tolerance:

5 %

Working Test Current:

50 mA

Trade Compliance

BZV47C11 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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