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BYW51FP-200

STMicroelectronics

BYW51FP-200 by STMicroelectronics

BYW51FP-200 diode by STMicroelectronics is a common cathode rectifier with 2 elements. It has a max reverse recovery time of 0.035 us and can handle up to 10A output current. Ideal for efficiency applications, it operates at temperatures up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,724 parts In-Stock

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Anansix

USA . 1,283 parts In-Stock

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1,283

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J2 Sourcing AB

Sweden . 1,095 parts In-Stock

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1,095

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Digiode

USA . 739 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 10 parts In-Stock

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10

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,313 parts In-Stock

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$0.071

100+ parts

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$0.064

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2,313

$0.071

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$0.064

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MKK Technologies

India . 133 parts In-Stock

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$0.133

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133

$0.133

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DigiPath Technology Company

USA . 133 parts In-Stock

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$0.133

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133

$0.133

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AZTECH Wire

Italy . 908 parts In-Stock

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$20.250

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908

$20.250

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Native Components

USA . 405 parts In-Stock

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$21.660

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405

$21.660

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Northwest PG Solutions

USA . 1,380 parts In-Stock

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$23.826

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$21.443

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$23.826

$21.443

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Component Stockers USA

USA . 542 parts In-Stock

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$99.990

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542

$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,300 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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Corphita

USA . 1,945 parts In-Stock

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Parana Technologies

USA . 1,580 parts In-Stock

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$0.085

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1,580

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$0.085

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Assy Fe

Spain . 1,000 parts In-Stock

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Overview

Upgrade your efficiency with the STMicroelectronics BYW51FP-200 diode rectifier. Trusted for its superior quality and reliability, STMicroelectronics is a leading manufacturer in the industry. This diode rectifier, featuring a common cathode configuration and fast reverse recovery time, is perfect for various applications where high efficiency is crucial. With a maximum output current of 10A and low forward voltage, this diode offers unmatched performance and value to customers looking to optimize their systems. Choose STMicroelectronics for advanced technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making them resistant to environmental factors and mechanical damage.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy integration into circuits, simplifying the design process.

Maximum Reverse Recovery Time: 0.035 us

Ensures fast operation and efficient energy conversion, ideal for high-speed applications.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement on circuit boards.

No. of Terminals: 3

Provides multiple connection points for flexibility in circuit design.

Package Style (Meter): FLANGE MOUNT

Allows for secure attachment to larger components, ensuring stability and reliability.

Application: EFFICIENCY

Designed specifically for efficient energy conversion, suitable for high-performance applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating conditions.

Terminal Finish: MATTE TIN

Provides a reliable and low-resistance connection for improved performance.

Terminal Position: SINGLE

Simplifies installation and connection in circuits.

Case Connection: ISOLATED

Prevents electrical interference and improves circuit safety.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification of AC to DC, ensuring reliable and efficient power supply.

Maximum Forward Voltage (VF): 0.85 V

Low forward voltage drop minimizes power loss and increases efficiency.

Maximum Output Current: 10 A

Capable of handling high currents, suitable for demanding applications.

Terminal Form: THROUGH-HOLE

Allows for easy soldering and secure connection to circuit boards.

No. of Elements: 2

Provides redundancy and improved performance in the circuit.

Maximum Repetitive Peak Reverse Voltage: 200 V

Can handle high reverse voltages, suitable for demanding applications.

Maximum Non Repetitive Peak Forward Current: 100 A

Capable of handling high peak currents, ideal for surge protection and heavy loads.

Diode Element Material: SILICON

High-quality material for improved reliability and performance in rectification applications.

Technical Specifications

Diodes & Rectifiers BYW51FP-200 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.85 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYW51FP-200 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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