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BYW100-50

STMicroelectronics

BYW100-50 by STMicroelectronics

BYW100-50 by STMicroelectronics is a silicon rectifier diode designed for high efficiency applications. It features a max reverse recovery time of 0.035 µs, operates at up to 150 °C, and supports a peak reverse voltage of 50 V. Ideal for power management in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,482 parts In-Stock

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Vyrian

USA . 1,252 parts In-Stock

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Anansix

USA . 930 parts In-Stock

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930

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IDEA Electronic Components Group

UK . 2,342 parts In-Stock

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$0.102

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$0.092

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2,342

$0.102

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$0.092

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MKK Technologies

India . 992 parts In-Stock

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$0.192

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992

$0.192

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DigiPath Technology Company

USA . 992 parts In-Stock

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$0.192

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992

$0.192

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Northwest PG Solutions

USA . 2,225 parts In-Stock

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Corphita

USA . 1,056 parts In-Stock

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Parana Technologies

USA . 557 parts In-Stock

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$0.122

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557

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Native Components

USA . 242 parts In-Stock

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Overview

Unlock exceptional efficiency and reliability with the BYW100-50 rectifier diode from STMicroelectronics. Renowned for their commitment to quality, STMicroelectronics delivers cutting-edge solutions designed to enhance your applications across diverse industries. With its robust performance under extreme temperatures and minimal reverse recovery time, this diode ensures optimal functionality while minimizing energy loss. Choose BYW100-50 for superior value and peace of mind in your electronic designs!

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package material offers excellent insulation properties, enhancing reliability and durability in various environmental conditions.

Config: SINGLE

A single diode configuration simplifies circuit design, making it easier to integrate into various applications.

Maximum Reverse Recovery Time: 0.035 us

A low reverse recovery time improves efficiency by minimizing energy loss during switching, ideal for high-speed applications.

Maximum Reverse Current: 10 uA

The low reverse current ensures minimal leakage, thus improving overall circuit efficiency and performance.

Package Shape: ROUND

This round shape allows for easy mounting and integration into compact designs, making it versatile for different PCB layouts.

No. of Terminals: 2

A two-terminal design simplifies the connection process and reduces the footprint on the PCB.

Package Style (Meter): LONG FORM

The long form package style allows for better thermal dissipation, improving reliability during operation.

Application: EFFICIENCY

Designed specifically for efficient applications, this diode is well-suited for energy-sensitive environments.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability and performance in demanding environments and reduces the risk of thermal failures.

Minimum Operating Temperature: -40 °C

The wide temperature range allows for reliable operation in extreme conditions, making it suitable for outdoor and industrial applications.

Terminal Position: AXIAL

Axial terminals facilitate easy installation in through-hole technology, enhancing versatility for various circuit configurations.

Case Connection: ISOLATED

Isolated connections provide added safety and reduce the risk of short circuits, ensuring safe operation.

Maximum Power Dissipation: 1.3 W

A power dissipation of 1.3 W allows the diode to handle significant energy without overheating, ensuring reliable performance.

Diode Type: RECTIFIER DIODE

This rectifier diode is optimized for converting AC to DC, making it essential in power supply applications.

Maximum Forward Voltage (VF): 1.2 V

The low forward voltage drop maximizes efficiency by minimizing power loss when the diode is conducting.

Maximum Output Current: 1.5 A

With a maximum output current of 1.5 A, this diode is capable of handling moderate loads, making it suitable for a range of applications.

Terminal Form: WIRE

Wire terminals provide robust connections, enhancing mechanical stability during operation and assembly.

Maximum Repetitive Peak Reverse Voltage: 50 V

This high voltage rating allows the diode to withstand significant reverse voltages, protecting circuits from damage.

Maximum Non Repetitive Peak Forward Current: 50 A

The capability to handle high transient currents makes this diode suitable for applications with potential high inrush currents.

Diode Element Material: SILICON

Silicon diode technology ensures good performance characteristics, and reliability, and is widely used in various electronic applications.

Technical Specifications

Diodes & Rectifiers BYW100-50 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LEAKAGE CURRENT IS NOT AT 25 DEG C

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

O-LALF-W2

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

1.5 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

1.3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BYW100-50 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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