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BYV10-20A

STMicroelectronics

BYV10-20A by STMicroelectronics

BYV10-20A by STMicroelectronics is a Schottky rectifier diode with a max output current of 1 A and peak reverse voltage of 20 V. It operates b/w -65 °C to 125°C, making it ideal for high-efficiency power applications. Its isolated axial design ensures reliable performance in compact circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,758 parts In-Stock

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3,758

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ECAB

Sweden . 1,184 parts In-Stock

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1,184

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Anansix

USA . 804 parts In-Stock

1+ parts

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804

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Vyrian

USA . 460 parts In-Stock

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460

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,410 parts In-Stock

1+ parts

$0.140

100+ parts

-

1k+ parts

$0.126

10k+ parts

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1,410

$0.140

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$0.126

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MKK Technologies

India . 2,041 parts In-Stock

1+ parts

$0.263

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2,041

$0.263

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DigiPath Technology Company

USA . 2,041 parts In-Stock

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$0.263

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2,041

$0.263

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Native Components

USA . 800 parts In-Stock

1+ parts

$0.424

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$0.408

800

$0.424

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$0.408

Northwest PG Solutions

USA . 669 parts In-Stock

1+ parts

$0.467

100+ parts

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10k+ parts

$0.412

669

$0.467

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$0.412

Perfect Parts

USA . 3,203 parts In-Stock

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3,203

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GreenTree Electronics

Israel . 2,860 parts In-Stock

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2,860

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Parana Technologies

USA . 1,517 parts In-Stock

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$0.167

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1,517

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$0.167

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Corphita

USA . 506 parts In-Stock

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506

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Overview

Unlock the power of efficiency with the BYV10-20A diode from STMicroelectronics, a trusted leader in semiconductor innovation. Designed for superior performance, this rectifier diode delivers reliable operation across a wide temperature range, making it ideal for various applications, from power supplies to automotive systems. Experience enhanced durability and lower energy loss, ensuring your projects thrive in reliability and longevity. Choose quality; choose STMicroelectronics!

Feature Benefit Bullets

Package Body Material: GLASS

The glass package material ensures excellent thermal performance and greater reliability in harsh environments.

Config: SINGLE

The single configuration simplifies circuit design and minimizes space, making it ideal for compact applications.

Package Shape: ROUND

The round package shape allows for better integration into circular schematics and enhances the aesthetic design of electronic assemblies.

No. of Terminals: 2

With just two terminals, this diode type allows for easy installation and reduced complexity in electronic circuits.

Package Style (Meter): LONG FORM

The long form package style provides ample physical length for efficient soldering and heat dissipation.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature makes this diode suitable for high-temperature applications, enhancing its versatility.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures reliable performance in extreme cold conditions, expanding its usability.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance, leading to longer product life.

Terminal Position: AXIAL

Axial terminal positioning simplifies layout and integration into PCB designs, making it user-friendly for engineers.

Case Connection: ISOLATED

An isolated case connection prevents ground loops, increasing the reliability and safety of the diode in electrical circuits.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it effectively converts AC to DC, making it suitable for a wide range of applications in power supply rectification.

Maximum Forward Voltage (VF): 0.75 V

A low maximum forward voltage ensures efficient operation and minimizes power loss in the circuit.

Maximum Output Current: 1 A

With a maximum output current of 1 A, this diode is capable of handling moderate power loads effectively.

Technology: SCHOTTKY

Schottky technology provides fast switching times and low forward voltage drop, making it suitable for high-frequency applications.

Terminal Form: WIRE

The wire terminal form offers flexibility in mounting and allows for diverse application scenarios in electronic designs.

Maximum Repetitive Peak Reverse Voltage: 20 V

High peak reverse voltage capability ensures reliability in applications where reverse voltage spikes may occur.

Maximum Non Repetitive Peak Forward Current: 25 A

Allowing for high non-repetitive peak forward current makes this diode robust enough to handle transient loads without failure.

Diode Element Material: SILICON

Silicon material ensures good overall conductivity and durability, making this diode a trustworthy choice for various electronic needs.

Technical Specifications

Diodes & Rectifiers BYV10-20A attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

25 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYV10-20A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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