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BYV133-45

NXP Semiconductors

BYV133-45 by NXP Semiconductors

BYV133-45 by NXP Semiconductors is a Schottky rectifier diode with a max output current of 20A and a max repetitive peak reverse voltage of 45V. It features a common cathode configuration, suitable for applications requiring high-speed switching and low forward voltage drop in electronic circuits.

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Digiode

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Overview

Unlock the power of cutting-edge technology with the NXP Semiconductors BYV133-45 diode. Designed for maximum efficiency and performance, this high-quality diode offers unparalleled reliability and durability in a wide range of applications. From power supplies to battery chargers, the BYV133-45 delivers superior functionality and precision, making it the perfect choice for professionals and DIY enthusiasts alike. Trust NXP Semiconductors for all your semiconductor needs and experience the difference in quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability, making the product suitable for various industrial applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient current flow and easy integration into circuit designs.

Maximum Output Current: 20 A

High output current capability ensures the diode can handle heavy loads without issues, making it ideal for power applications.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching speed, enhancing the overall performance of the diode.

Maximum Repetitive Peak Reverse Voltage: 45 V

The high peak reverse voltage rating provides overvoltage protection, making the diode suitable for diverse circuit protection applications.

Maximum Non Repetitive Peak Forward Current: 110 A

High peak forward current capability ensures the diode can handle surge currents efficiently, making it reliable in demanding environments.

Technical Specifications

Diodes & Rectifiers BYV133-45 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Additional Features:

WITHSTAND REVERSE VOLTAGE TRANSIENTS, SURGE CAPABILITY

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

110 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BYV133-45 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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