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BAT46CWFILM

STMicroelectronics

BAT46CWFILM by STMicroelectronics

BAT46CWFILM by STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 0.25 V and supports up to 150 °C operating temp. Its compact design features a common cathode configuration, ideal for surface mount applications in electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,670 parts In-Stock

1+ parts

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7,670

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Anansix

USA . 928 parts In-Stock

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928

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Digiode

USA . 925 parts In-Stock

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925

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 35 parts In-Stock

1+ parts

$0.172

100+ parts

-

1k+ parts

$0.155

10k+ parts

-

35

$0.172

-

$0.155

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MKK Technologies

India . 1,628 parts In-Stock

1+ parts

$0.324

100+ parts

-

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1,628

$0.324

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DigiPath Technology Company

USA . 1,628 parts In-Stock

1+ parts

$0.324

100+ parts

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1,628

$0.324

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AZTECH Wire

Italy . 570 parts In-Stock

1+ parts

$20.850

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570

$20.850

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Component Stockers USA

USA . 550 parts In-Stock

1+ parts

$99.990

100+ parts

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550

$99.990

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Kepictronics

USA . 6,000 parts In-Stock

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6,000

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Corphita

USA . 4,354 parts In-Stock

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4,354

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Parana Technologies

USA . 2,070 parts In-Stock

1+ parts

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$0.206

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2,070

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$0.206

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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1,800

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Northwest PG Solutions

USA . 1,296 parts In-Stock

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1,296

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Alle Elektronik GmbH

Germany . 1,200 parts In-Stock

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1,200

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Native Components

USA . 922 parts In-Stock

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922

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Overview

Unlock superior performance with the BAT46CWFILM from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This versatile Schottky rectifier diode excels in efficiency and reliability, making it perfect for diverse applications like power management and signal processing. With its compact design, high-temperature resilience, and exceptional current handling, you can enhance your circuits while ensuring longevity and optimal performance. Experience the STMicroelectronics advantage today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers good insulation properties and protects the diode from environmental factors, improving its reliability.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration simplifies circuit design by allowing multiple diodes to share a common connection, saving space and reducing complexity.

Surface Mount: YES

Surface mount technology allows for compact design and easy integration into modern printed circuit boards, making assembly more efficient.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB and provides stability during mounting, improving overall device performance.

No. of Terminals: 3

With three terminals, this diode structure allows for easier connections and versatile integration into various applications.

Package Style (Meter): SMALL OUTLINE

A small outline package style reduces the size requirements on the circuit board, enabling more compact device designs.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliability in demanding environments, making it suitable for various applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring long-term reliability in electrical connections.

Terminal Position: DUAL

Dual terminal positioning allows for flexible PCB layout options, which can enhance the design efficiency.

Diode Type: RECTIFIER DIODE

Being a rectifier diode means this component is well-suited for converting AC to DC, ideal for power supply applications.

Maximum Forward Voltage (VF): 0.25 V

A low forward voltage drop increases energy efficiency and reduces heat generation, leading to more reliable and efficient performance.

Maximum Output Current: 0.15 A

This rating indicates the diode can handle moderate power loads, making it suitable for a variety of low to medium current applications.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drops, enhancing performance in high-frequency applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and improves mechanical stability, ensuring reliable connections.

No. of Elements: 2

With two elements, this diode can provide more robust performance in rectification and signal processing applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

The high reverse voltage rating allows for usage in applications with significant voltage spikes, enhancing durability.

Maximum Non Repetitive Peak Forward Current: 1 A

The ability to handle high peak currents ensures the diode can withstand transients, making it suitable for demanding applications.

Diode Element Material: SILICON

Silicon as a material provides excellent electrical properties and stability, making it a reliable choice for diode applications.

Technical Specifications

Diodes & Rectifiers BAT46CWFILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.25 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAT46CWFILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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