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BAS70ZFILM

STMicroelectronics

BAS70ZFILM by STMicroelectronics

BAS70ZFILM by STMicroelectronics is a Schottky rectifier diode in a small outline package, ideal for compact applications. It features a max forward voltage of 0.41 V, supports up to 70 V reverse voltage, and operates at 150 °C. Perfect for efficient power management in electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,382 parts In-Stock

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8,382

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Chip Stock

USA . 4,500 parts In-Stock

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4,500

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Digiode

USA . 1,724 parts In-Stock

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1,724

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Anansix

USA . 561 parts In-Stock

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561

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,077 parts In-Stock

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$0.013

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$0.012

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1,077

$0.013

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$0.012

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MKK Technologies

India . 1,946 parts In-Stock

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$0.024

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1,946

$0.024

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DigiPath Technology Company

USA . 1,946 parts In-Stock

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$0.024

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1,946

$0.024

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AZTECH Wire

Italy . 1,037 parts In-Stock

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$14.050

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1,037

$14.050

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Northwest PG Solutions

USA . 2,053 parts In-Stock

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Corphita

USA . 2,000 parts In-Stock

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Native Components

USA . 339 parts In-Stock

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339

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Parana Technologies

USA . 275 parts In-Stock

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$0.015

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275

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$0.015

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Perfect Parts

USA . 2 parts In-Stock

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Overview

Unlock unparalleled performance with the BAS70ZFILM from STMicroelectronics, a leader in semiconductor innovation. This high-quality Schottky rectifier diode delivers efficiency and reliability for various applications, from power management to signal processing. Its compact design ensures seamless integration into your projects while minimizing space. Trust in STMicroelectronics' expertise to elevate your designs with superior quality, reducing energy loss and enhancing overall system performance. Embrace the future of electronics today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers good protection against environmental factors, ensuring durability and reliability in various applications.

Config: SINGLE

A single configuration allows for easy integration into designs where space is limited, making it ideal for compact circuits.

Surface Mount: YES

Surface mount capability ensures ease of assembly and allows for high-density PCB designs, which is essential in modern electronics.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient use of PCB space and aligns well with standard layout practices in electronic design.

Number of Terminals: 2

With only two terminals, it simplifies the circuit design, making it easier to manage connections and reducing the potential for errors.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports compact design requirements, allowing for more efficient use of board space in various applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C enables this diode to perform reliably in demanding environments, enhancing its versatility.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and protects against corrosion, ensuring a reliable electrical connection over time.

Terminal Position: DUAL

Dual terminal position offers design flexibility, making it easier to incorporate into different PCB layouts and configurations.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 0.41 V

A low forward voltage drop of 0.41 V improves efficiency in power applications by reducing energy losses during operation.

Maximum Output Current: 0.07 A

A maximum output current of 0.07 A makes this diode suitable for low-power applications, ensuring performance where it’s needed.

Technology: SCHOTTKY

Schottky technology allows for faster switching speeds and lower forward voltage drop, enhancing overall circuit performance.

Terminal Form: GULL WING

Gull wing terminals provide a strong mechanical connection and ease of soldering, ensuring reliable assembly on PCBs.

Maximum Repetitive Peak Reverse Voltage: 70 V

A peak reverse voltage of 70 V ensures the diode can handle significant reverse voltage conditions, making it robust for various circuits.

Maximum Non-Repetitive Peak Forward Current: 1 A

This feature allows for higher current surges without damage, providing additional reliability during transient conditions.

Diode Element Material: SILICON

Silicon material is known for its effective semiconductor properties, ensuring optimal performance for various applications.

Technical Specifications

Diodes & Rectifiers BAS70ZFILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.41 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.07 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAS70ZFILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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