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BAS70WFILM

STMicroelectronics

BAS70WFILM by STMicroelectronics

BAS70WFILM by STMicroelectronics is a Schottky rectifier diode in a small outline package, ideal for compact applications. It features a max reverse voltage of 70V, forward voltage of 0.41V, and operates up to 150 °C. Perfect for efficient power management in electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ECAB

Sweden . 30,000 parts In-Stock

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30,000

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Vyrian

USA . 8,626 parts In-Stock

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8,626

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R&J Components

USA . 4,259 parts In-Stock

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4,259

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Anansix

USA . 1,404 parts In-Stock

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1,404

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Digiode

USA . 173 parts In-Stock

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173

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,804 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

$0.061

10k+ parts

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1,804

$0.068

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$0.061

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MKK Technologies

India . 1,860 parts In-Stock

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$0.128

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1,860

$0.128

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DigiPath Technology Company

USA . 1,860 parts In-Stock

1+ parts

$0.128

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1,860

$0.128

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AZTECH Wire

Italy . 1,014 parts In-Stock

1+ parts

$16.260

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1,014

$16.260

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Kepictronics

USA . 306,000 parts In-Stock

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306,000

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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Corphita

USA . 2,828 parts In-Stock

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2,828

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Parana Technologies

USA . 1,575 parts In-Stock

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$0.081

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1,575

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$0.081

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Northwest PG Solutions

USA . 1,194 parts In-Stock

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Native Components

USA . 319 parts In-Stock

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319

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Overview

Unlock superior performance with the BAS70WFILM from STMicroelectronics, a trusted leader in semiconductor innovation. This cutting-edge Schottky rectifier diode delivers unmatched efficiency and reliability, perfect for countless applications, from power management to signal processing. Its compact design and robust thermal capabilities ensure optimal operation, empowering engineers and designers to create high-quality solutions with confidence and ease. Elevate your projects with ST's commitment to excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and protection against environmental factors, making it suitable for various applications.

Config: SINGLE

A single configuration allows for simple integration into circuits, reducing complexity in design and layout.

Surface Mount: YES

Surface mount capability facilitates automated assembly and is ideal for high-density circuit designs.

Package Shape: RECTANGULAR

The rectangular package shape contributes to efficient space utilization on printed circuit boards (PCBs).

No. of Terminals: 3

The presence of three terminals provides flexibility in circuit connections and configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style enables compact designs, essential for space-constrained applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliability in demanding environments, suitable for automotive or industrial applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability and prevents oxidation, leading to improved connection integrity.

Terminal Position: DUAL

Dual terminal position adds flexibility in layout design, catering to various PCB arrangement needs.

Maximum Power Dissipation: 0.23 W

The specified maximum power dissipation ensures efficient performance while minimizing heat generation during operation.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is ideal for converting alternating currents (AC) to direct currents (DC), making it essential in power supply circuits.

Maximum Forward Voltage (VF): 0.41 V

Low forward voltage drop indicates higher efficiency and reduced energy loss in applications, leading to longer battery life for portable devices.

Maximum Output Current: 0.07 A

This output current rating makes it suitable for many low-power applications, ensuring reliable circuit performance.

Technology: SCHOTTKY

The Schottky technology allows for faster switching speeds and lower forward voltage drops, enhancing overall circuit efficiency.

Terminal Form: GULL WING

Gull wing terminal form provides better solder joint reliability and is compatible with automatic assembly processes.

Maximum Repetitive Peak Reverse Voltage: 70 V

A high reverse voltage rating allows the diode to handle substantial voltage spikes, protecting the circuit from damage.

Maximum Non Repetitive Peak Forward Current: 1 A

This high non-repetitive peak forward current rating enables the diode to withstand temporary current surges, increasing robustness.

Diode Element Material: SILICON

Silicon as the diode element material ensures excellent electrical properties and stability, making it a reliable choice for various applications.

Technical Specifications

Diodes & Rectifiers BAS70WFILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.41 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.07 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.23 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAS70WFILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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