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BAS70-09P6FILM

STMicroelectronics

BAS70-09P6FILM by STMicroelectronics

BAS70-09P6FILM by STMicroelectronics is a Schottky rectifier diode with a max reverse voltage of 70V and low reverse current of 10µA. It operates in extreme temps from -65 °C to 150 °C, making it ideal for compact electronic applications. Its flat terminals ensure easy surface mounting.

Median Price

$0.089

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 285 parts In-Stock

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$0.089

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$0.089

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Digiode

USA . 2,552 parts In-Stock

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Vyrian

USA . 1,994 parts In-Stock

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Anansix

USA . 1,068 parts In-Stock

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Native Components

USA . 86 parts In-Stock

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$0.045

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$0.043

86

$0.045

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$0.043

IDEA Electronic Components Group

UK . 1,031 parts In-Stock

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$0.183

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$0.165

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1,031

$0.183

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$0.165

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MKK Technologies

India . 1,199 parts In-Stock

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$0.344

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$0.344

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DigiPath Technology Company

USA . 1,199 parts In-Stock

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$0.344

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$0.344

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Parana Technologies

USA . 1,354 parts In-Stock

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$0.219

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$0.219

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Corphita

USA . 809 parts In-Stock

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809

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Perfect Parts

USA . 566 parts In-Stock

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Northwest PG Solutions

USA . 164 parts In-Stock

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Overview

Unlock superior performance with the BAS70-09P6FILM from STMicroelectronics, a leader in innovative semiconductor solutions. This Schottky rectifier diode offers exceptional efficiency and reliability for a range of applications, from power supplies to LED drivers. With its compact design and robust thermal capabilities, it ensures optimal operation under diverse conditions, delivering value that translates into lower energy costs and enhanced device longevity. Experience the STMicroelectronics advantage today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and resistance against environmental factors, making it ideal for various applications.

Config: SEPARATE, 2 ELEMENTS

With a separate 2-element configuration, this diode offers the flexibility needed for diverse circuit designs.

Surface Mount: YES

Surface mount capability enables easy integration into compact PCB designs, enhancing the overall design efficiency.

Maximum Reverse Current: 10 uA

A low maximum reverse current signifies high efficiency and minimal energy loss, promoting better performance in power applications.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient layout and space utilization on printed circuit boards.

Reverse Test Voltage: 70 V

A high reverse test voltage rating indicates robust performance under reverse bias conditions, suitable for high-voltage applications.

No. of Terminals: 6

Having 6 terminals enhances the connectivity options, allowing for versatile circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style ensures a compact footprint, making it perfect for space-constrained applications.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C allows the diode to perform reliably even in high-temperature environments.

Minimum Operating Temperature: -65 °C

The capability to operate at extremely low temperatures (-65 °C) makes this diode suitable for extreme thermal conditions.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and minimizes corrosion, ensuring long-lasting reliability.

Terminal Position: DUAL

The dual terminal position aids in effective heat dissipation and facilitates better performance in circuit applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically designed for converting alternating current (AC) to direct current (DC), making it valuable in power supply applications.

Maximum Forward Voltage (VF): 0.41 V

The low maximum forward voltage drop (0.41 V) maximizes efficiency during operation and minimizes power losses.

Maximum Output Current: 0.07 A

Capable of handling up to 0.07 A current, this diode is suitable for low to moderate power applications.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode boasts fast switching speeds and low voltage drop, ideal for high-efficiency applications.

Terminal Form: FLAT

Flat terminal form enhances the surface area contact for improved thermal and electrical performance.

No. of Elements: 2

Having 2 elements ensures redundancy and reliability, enhancing the diode's overall performance in critical applications.

Maximum Repetitive Peak Reverse Voltage: 70 V

With a maximum repetitive peak reverse voltage of 70 V, this diode is suitable for circuits that experience high voltage transients.

Diode Element Material: SILICON

Using silicon as the diode element material ensures good conductivity and thermal stability, making it a reliable choice in electronic circuits.

Technical Specifications

Diodes & Rectifiers BAS70-09P6FILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.41 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.07 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

70 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAS70-09P6FILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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