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2N692

STMicroelectronics

2N692 by STMicroelectronics

2N692 by STMicroelectronics is a single SCR with 25A max on-state current, 40mA DC gate trigger current, and 150A non-repetitive peak on-state current. It is used in applications requiring high voltage control such as power supplies and motor control systems.

Median Price

$13.836

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

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Avnet

USA . 64 parts In-Stock

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$13.836

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$12.129

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64

$13.836

$12.129

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Bristol Electronics

USA . 6 parts In-Stock

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$9.000

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$9.000

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American Microsemiconductor Inc.

USA . 19 parts In-Stock

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$10.620

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$10.620

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TEDSS.com

USA . 37 parts In-Stock

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$16.990

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Vyrian

USA . 7,105 parts In-Stock

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Anansix

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Digiode

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DigiKey Marketplace

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100

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Fibra_Brandt Electronic GMBH

Germany . 20 parts In-Stock

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ECAB

Sweden . 19 parts In-Stock

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Electronic Expediters

USA . 14 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 5 parts In-Stock

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LittleDiode

UK . 3 parts In-Stock

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Halfin

Belgium . 3 parts In-Stock

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PUI

USA . 2 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 2 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 497 parts In-Stock

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$4.015

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$3.613

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497

$4.015

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$3.613

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MKK Technologies

India . 1,425 parts In-Stock

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$7.550

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$7.550

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DigiPath Technology Company

USA . 1,425 parts In-Stock

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$7.550

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$7.550

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Andel Nordic

Denmark . 1,715 parts In-Stock

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$8.087

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$7.764

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$7.764

1,715

$8.087

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$7.764

$7.764

Microchip USA

USA . 9,174 parts In-Stock

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$18.200

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$18.200

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Corphita

USA . 4,566 parts In-Stock

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Parana Technologies

USA . 2,292 parts In-Stock

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$4.800

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Northwest PG Solutions

USA . 1,776 parts In-Stock

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Native Components

USA . 238 parts In-Stock

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Component Stockers USA

USA . 83 parts In-Stock

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$6.290

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FE SAS

France . 3 parts In-Stock

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Overview

Unleash the power of the 2N692 by STMicroelectronics, a top-quality Silicon Controlled Rectifier designed to exceed all expectations. With a maximum DC Gate Trigger Current of 40 mA and a Non Repetitive Peak On-state Current of 150 A, this product is perfect for a wide range of applications. Whether you need reliable performance or unparalleled efficiency, STMicroelectronics delivers. Say goodbye to compromise and hello to innovation with the 2N692 - the ultimate solution for your electronic needs.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal for the package body provides durability and efficient heat dissipation, ensuring the SCR can operate reliably under high temperatures.

Maximum DC Gate Trigger Current: 40 mA

The high maximum gate trigger current allows for precise control over the activation of the SCR, making it suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies the setup and installation process, making it user-friendly and easily integrated into different systems.

Non Repetitive Peak On-state Current: 150 A

The high non-repetitive peak on-state current capability enables the SCR to handle sudden surges in current without causing damage, ensuring reliability in high-power applications.

Package Shape: ROUND

The round package shape allows for easy mounting and installation in various electronic designs, providing flexibility and ease of use.

Terminal Form: SOLDER LUG

The solder lug terminal form ensures a secure connection and easy soldering, enhancing the overall stability and performance of the SCR.

Maximum On-state Current: 25 A

The high maximum on-state current capacity makes the SCR suitable for medium-power applications where a reliable and efficient performance is required.

Maximum Leakage Current: 2 mA

The low maximum leakage current minimizes power wastage and helps in maintaining the efficiency of the SCR during off-state operation.

Repetitive Peak Reverse Voltage: 800 V

The high repetitive peak reverse voltage capability makes the SCR suitable for handling high-voltage applications with ease and reliability.

Maximum Repetitive Peak Off-state Leakage Current: 20 uA

The low off-state leakage current ensures minimal power loss during off-state operation, improving the overall efficiency of the SCR.

No. of Terminals: 2

The two terminals provide a simple and easy connection setup, making the SCR user-friendly and suitable for a wide range of electronic applications.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount package style offers secure mounting options for the SCR, ensuring stability and reliability in different installation environments.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the SCR to operate efficiently in challenging thermal conditions, making it suitable for industrial applications.

Trigger Device Type: SCR

The SCR type trigger device offers fast and reliable switching capabilities, making it ideal for high-power and high-speed applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the SCR can function effectively even in cold environments, enhancing its versatility and reliability.

Terminal Position: UPPER

The upper terminal position makes it easy to access and connect the SCR, simplifying the installation process and ensuring a secure connection.

Maximum RMS On-state Current: 25 A

The high maximum RMS on-state current capacity allows the SCR to handle continuous high-current loads without compromising on performance or reliability.

Maximum DC Gate Trigger Voltage: 1.5 V

The low maximum gate trigger voltage ensures efficient and reliable activation of the SCR, making it suitable for low-voltage control applications.

Case Connection: ANODE

The anode case connection provides a stable and secure grounding point for the SCR, enhancing its performance and reliability in different circuit configurations.

Repetitive Peak Off-state Voltage: 800 V

The high repetitive peak off-state voltage capacity enables the SCR to withstand high-voltage conditions during off-state operation, ensuring durability and reliability.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

The high minimum critical rate of rise of off-state voltage ensures rapid and accurate switching of the SCR, making it suitable for high-speed applications.

Maximum Holding Current: 50 mA

The high maximum holding current ensures the SCR remains in the on-state even after the trigger signal is removed, providing stability and reliability in continuous operation.

Nominal Circuit Commutated Turn-off Time: 100 us

The nominal circuit commutated turn-off time ensures fast and efficient turn-off operations, reducing power loss and improving overall performance of the SCR.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N692 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

100 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

50 mA

JEDEC-95 Code:

TO-48

JESD-30 Code:

O-MUPM-D2

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

150 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

25 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

25 A

Maximum Repetitive Peak Off-state Leakage Current:

20 uA

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

2N692 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-00-824-1441, 5961008241441, 5961-01-057-1488, 5961010571488, 6130-01-205-0392, 6130012050392

NIIN

008241441, 010571488, 012050392

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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