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1N5822UB1

STMicroelectronics

1N5822UB1 by STMicroelectronics

1N5822UB1 by STMicroelectronics is a Schottky rectifier diode designed for power applications. It features a max output current of 3 A, a peak reverse voltage of 40 V, and operates at temperatures up to 150 °C. Its compact no-lead design suits surface mount configurations.

Median Price

$104.260

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Arrow

USA . 4 parts In-Stock

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$78.690

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$78.690

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Verical

USA . 4 parts In-Stock

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$78.690

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Mouser Electronics

USA . 215 parts In-Stock

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$104.260

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DigiKey

USA . 13 parts In-Stock

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$104.260

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$79.250

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Chip1Stop

Japan . 7 parts In-Stock

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$106.870

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Avnet

USA . 15 parts In-Stock

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Digiode

USA . 4,247 parts In-Stock

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$83.590

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Vyrian

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Anansix

USA . 1,112 parts In-Stock

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IDEA Electronic Components Group

UK . 917 parts In-Stock

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$0.129

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$0.116

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917

$0.129

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$0.116

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MKK Technologies

India . 1,498 parts In-Stock

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$0.242

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DigiPath Technology Company

USA . 1,498 parts In-Stock

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$0.242

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Corphita

USA . 536 parts In-Stock

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$79.191

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Parana Technologies

USA . 494 parts In-Stock

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$0.154

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Northwest PG Solutions

USA . 322 parts In-Stock

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Native Components

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Overview

Elevate your power applications with the 1N5822UB1 from STMicroelectronics, a trusted leader in semiconductor solutions. This high-performance Schottky rectifier diode combines exceptional quality and reliability, ensuring optimal efficiency in demanding environments. With a compact design perfect for surface mounting, it excels in delivering powerful performance for various electronic projects. Unlock seamless operation and peace of mind with ST's proven expertise—your ideal choice for dependable power management!

Feature Benefit Bullets

Config: SINGLE

The single configuration enables easy integration into various circuit designs, making it versatile for different applications.

Surface Mount: YES

Surface mount capability allows for efficient use of space on printed circuit boards (PCBs) and enables automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape optimizes layout for PCB design, providing flexibility in component placement and improving thermal performance.

No. of Terminals: 2

The two-terminal design simplifies connectivity and reduces the complexity of the circuit, making it easier to integrate.

Package Style (Meter): SMALL OUTLINE

The small outline package minimizes board space usage while maintaining high performance, ideal for compact designs.

Application: POWER

Designed for power applications, this diode efficiently handles high current levels, ensuring reliable operation in demanding environments.

Maximum Operating Temperature: 150 °C

With a high operating temperature rating, this diode can perform reliably in extreme conditions, enhancing the longevity of the circuit.

Terminal Position: DUAL

Dual terminal position allows for better layout options and flexibility in PCB design, providing improved accessibility.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting alternating current (AC) to direct current (DC), making it essential for power supply applications.

Maximum Output Current: 3 A

The capability to handle up to 3 A of output current makes this diode suitable for a wide range of applications, including power regulation and conversion.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop and fast switching speeds, improving efficiency and performance in high-speed applications.

Terminal Form: NO LEAD

No lead terminal design offers better thermal performance and reduces the size of the package, ideal for high-density applications.

Maximum Repetitive Peak Reverse Voltage: 40 V

The diode can handle up to 40 V of repetitive peak reverse voltage, making it suitable for applications requiring high voltage tolerance.

Maximum Non Repetitive Peak Forward Current: 80 A

With a non-repetitive peak forward current of up to 80 A, this diode can handle transient surges, making it robust and reliable for critical applications.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures excellent electrical properties and stability under various operating conditions.

Technical Specifications

Diodes & Rectifiers 1N5822UB1 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-XDSO-N2

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

3 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

1N5822UB1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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