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IRF9130

Siliconix

IRF9130 by Siliconix

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; JESD-609 Code: e0; Maximum Drain Current (Abs) (ID): 11 A;

Median Price

$20.533

Lifecycle Status

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Verical

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Chip1Stop

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Nova Conductors

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Bristol Electronics

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Digiode

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Mil-Aero Solutions, Inc.

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Fibra_Brandt Electronic GMBH

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Continental Prestige Electronics

USA . 1,553 parts In-Stock

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Modulus Dynamics

Lithuania . 8,542 parts In-Stock

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Corphita

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Technical Specifications

Other Function Transistors IRF9130 attributes and parameters. Explore more Other Function Transistors devices from Siliconix

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

11 A

Maximum Drain Current (ID):

11 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

IRF9130 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-226-9674, 5961012269674, 5961-01-228-8737, 5961012288737, 5961-01-253-3417, 5961012533417, 5961-01-193-5326, 5961011935326, 5961-99-253-4964, 5961992534964, 5961-99-776-4336, 5961997764336

NIIN

012269674, 012288737, 012533417, 011935326, 992534964, 997764336

Manufacturer Highlights

Siliconix

VISHAY SILICONIX Vishay, through its Siliconix subsidiary, leads the industry in the development of power semiconductor products that improve the efficiency of power management circuitry in end products while reducing space requirements. As the world's number-one brand of low-voltage power MOSFETs (metal-oxide semiconductor field-effect transistors), Vishay Siliconix products play a key role in making handheld and portable electronic systems operate more efficiently from smaller and lighter battery packs. Higher-voltage Vishay Siliconix power MOSFETs are used for applications from electric motor control in industrial systems to converting power in the switches and routers that enable the world's communications networks. Vishay Siliconix power ICs address markets ranging from mobile communications and computing to the fixed telecom infrastructure and include switchmode regulators, linear regulators, and power management devices. A number of devices, built on specialized process flows, are purpose-made for the medical, automotive, and military markets. Vishay Siliconix milestones include the first analog switch, the first analog multiplexer, the first small-outline power MOSFET (LITTLE FOOT®), and the first power MOSFETs built on Trench technology (TrenchFET®). This tradition of innovation continues with new silicon technologies designed to maximize power MOSFET performance. In dc-to-dc conversion and load switching, Vishay Siliconix leads the market with high-density TrenchFET silicon processes and innovative package options for better thermal performance (PowerPAK®, PolarPAK®), smaller footprints (ChipFET®, MICRO FOOT®, PowerPAK SC-70, PowerPAK SC-75), and integration of multiple devices (PowerPAIR®). Vishay Siliconix power ICs focus on delivering the optimal and appropriate level of integration for power management and conversion. Recent innovations include the industry’s most powerful DrMOS solution for managing the core voltage in PCs, servers, and other CPU-based systems, and the new microBUCK™ dc-to-dc converter family, which combines the controller IC, MOSFETs, and bootstrap switch for a buck regulator in a tiny 4-mm2 package. The Vishay Siliconix product portfolio now also features high-voltage planar MOSFETs acquired from International Rectifier. Siliconix was founded in 1962. In 1998, Vishay acquired the Semiconductor Business Group of TEMIC, which included 80% of Siliconix. Vishay purchased the remaining 20% of Siliconix shares in 2005.

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