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SK320ATR

Sangdest Microelectronics (Nanjing)

SK320ATR by Sangdest Microelectronics (Nanjing)

SK320ATR by Sangdest Microelectronics is a Schottky rectifier diode with 200V reverse test voltage and 3A max output current. Ideal for applications requiring high efficiency and low forward voltage drop, such as power supplies and battery chargers.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 20,000 parts In-Stock

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Vyrian

USA . 378 parts In-Stock

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378

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 204 parts In-Stock

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$8.893

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$8.893

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Component Stockers USA

USA . 35,114 parts In-Stock

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$0.050

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$0.050

Infinite Electronics LLP (Excess)

. 7,711 parts In-Stock

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7,711

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Experience the superior quality and reliability of the SK320ATR diode by Sangdest Microelectronics (Nanjing). With a maximum reverse current of 1000uA and a maximum forward voltage of 0.9V, this Schottky diode is designed for high-performance applications. From its durable plastic/epoxy package body to its dual terminal position, this diode offers unmatched value and benefits. Whether you're looking for a reliable rectifier diode for your electronics project or need a solution for power conversion, the SK320ATR delivers exceptional performance and efficiency. Choose Sangdest Microelectronics for top-notch quality and innovation in diode technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and protection for the diode, making it long-lasting and suitable for various environments.

Config: SINGLE

This single configuration simplifies installation and reduces the chances of wiring errors, making it user-friendly and efficient.

Surface Mount: YES

The surface mount option allows for easy and secure mounting on circuit boards, saving space and simplifying assembly.

Maximum Reverse Current: 1000 uA

With a low reverse current, this diode provides excellent leakage control, enhancing overall circuit performance.

Package Shape: RECTANGULAR

The rectangular shape offers versatility in installation and fits well in a wide range of applications.

Reverse Test Voltage: 200 V

The high reverse test voltage ensures reliable performance and protection against reverse voltage spikes.

No. of Terminals: 2

Having only two terminals simplifies connections and reduces the risk of wiring errors, ensuring hassle-free installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on circuit boards, ideal for compact electronic devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures, suitable for various industrial applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows for reliable performance even in cold environments, making it versatile and durable.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and allows for easy connections, enhancing overall versatility.

Diode Type: RECTIFIER DIODE

A rectifier diode is ideal for converting AC to DC current, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 0.9 V

The low forward voltage drop ensures energy efficiency and minimal power loss, ideal for high-performance circuits.

Maximum Output Current: 3 A

With a high output current capacity, this diode can handle heavy loads and is suitable for power electronics applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low voltage drop, making this diode ideal for high-frequency applications.

Terminal Form: C BEND

The C bend terminal form provides secure connections and ensures stability in various operating conditions.

Maximum Repetitive Peak Reverse Voltage: 200 V

The high repetitive peak reverse voltage rating ensures protection against reverse voltage spikes, enhancing reliability in the circuit.

Maximum Non-Repetitive Peak Forward Current: 80 A

With a high peak forward current rating, this diode can handle short-term power surges, making it suitable for demanding applications.

Diode Element Material: SILICON

Silicon diodes offer high efficiency and reliability, making them a popular choice for various electronic circuits.

Technical Specifications

Diodes & Rectifiers SK320ATR attributes and parameters. Explore more Diodes & Rectifiers devices from Sangdest Microelectronics (Nanjing)

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

1000 uA

Reverse Test Voltage:

200 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

SK320ATR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Sangdest Microelectronics (Nanjing)

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 48,254 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, Analog, MEMS and Sensors Group

Marco Cassis

President, Automotive and Discrete Group

Marco Maria Monti

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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