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GS1JTR

Sangdest Microelectronics (Nanjing)

GS1JTR by Sangdest Microelectronics (Nanjing)

GS1JTR by Sangdest Microelectronics (Nanjing) is a single rectifier diode with 600V reverse test voltage, 1A max output current, and 2.5us reverse recovery time. Ideal for applications requiring high-speed switching in small outline packages at temperatures ranging from -65°C to 175°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

LIBRA Elektronik GmbH

Germany . 3,190 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,190

-

-

-

-

Vyrian

USA . 540 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

540

-

-

-

-

Nova Conductors

Japan . 66 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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66

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 27,893 parts In-Stock

1+ parts

$0.020

100+ parts

-

1k+ parts

-

10k+ parts

-

27,893

$0.020

-

-

-

AZTECH Wire

Italy . 540 parts In-Stock

1+ parts

$8.718

100+ parts

-

1k+ parts

-

10k+ parts

-

540

$8.718

-

-

-

Speed Components Ltd (Excess)

Israel . 7,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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7,500

-

-

-

-

Continental Prestige Electronics

USA . 6,622 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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6,622

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-

-

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Kepictronics

USA . 1,550 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,550

-

-

-

-

Argo Parts USA

USA . 570 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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570

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-

-

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Bastille Electronics

Australia . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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50

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-

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Overview

Discover the GS1JTR by Sangdest Microelectronics (Nanjing), a high-quality rectifier diode that offers reliable performance and durability. With its fast reverse recovery time and low reverse current, this diode is perfect for a variety of applications. Whether you're looking to improve efficiency in power supplies or enhance circuit protection, the GS1JTR delivers exceptional value and benefits. Trust in Sangdest Microelectronics' reputation for excellence and choose the GS1JTR for all your diode needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for a wide range of applications.

Config: SINGLE

Simplified design and easier integration into circuits.

Surface Mount: YES

Allows for easy and efficient PCB assembly.

Maximum Reverse Recovery Time: 2.5 us

Efficient switching capability for faster operation.

Maximum Reverse Current: 5 uA

Low leakage current for improved energy efficiency.

Package Shape: RECTANGULAR

Easy to handle and mount in various applications.

Reverse Test Voltage: 600 V

High reverse voltage capability for versatility in different circuits.

No. of Terminals: 2

Simplified connection and integration into circuits.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained applications.

Maximum Operating Temperature: 175 °C

High temperature tolerance for reliable performance in different environments.

Minimum Operating Temperature: -65 °C

Wide temperature range for operation in extreme conditions.

Terminal Position: DUAL

Flexibility in component placement and orientation.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications.

Maximum Forward Voltage (VF): 1.1 V

Low forward voltage drop for efficient power conversion.

Maximum Output Current: 1 A

Sufficient current handling capacity for many applications.

Terminal Form: C BEND

Easy to install and connect in circuits.

Maximum Repetitive Peak Reverse Voltage: 600 V

High reverse voltage rating for reliable operation.

Maximum Non Repetitive Peak Forward Current: 30 A

Handles high peak currents for surge protection.

Diode Element Material: SILICON

Common semiconductor material known for its reliability and performance.

Technical Specifications

Diodes & Rectifiers GS1JTR attributes and parameters. Explore more Diodes & Rectifiers devices from Sangdest Microelectronics (Nanjing)

Specs

Additional Features:

LOW POWER LOSS

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

2.5 us

Reverse Test Voltage:

600 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

GS1JTR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Sangdest Microelectronics (Nanjing)

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 48,254 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, Analog, MEMS and Sensors Group

Marco Cassis

President, Automotive and Discrete Group

Marco Maria Monti

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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