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RTQ045N03TR

ROHM

RTQ045N03TR by ROHM

ROHM RTQ045N03TR is a N-CHANNEL FET with 30V DS breakdown voltage and 0.06 ohm RDS(on). Ideal for switching applications, it has 18A IDM, 4.5A ID, and operates in enhancement mode. With GULL WING terminals and small outline package style, it can handle up to 1.25W power dissipation at 150°C max temperature.

Median Price

$0.850

Lifecycle Status

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Mouser Electronics

USA . 2,132 parts In-Stock

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$0.850

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$0.427

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$0.303

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$0.246

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DigiKey

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Chip1Stop

Japan . 3,500 parts In-Stock

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$1.240

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Verical

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Chip Stock

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Diverse Electronics

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Sensible Micro Corp

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ComSIT Distribution GmbH

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Semtec, LLC

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CoreStaff

Japan . 2 parts In-Stock

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Ampacity Inc.

Singapore . 3,678 parts In-Stock

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Perfect Parts

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Overview

Discover the innovative RTQ045N03TR by ROHM, a top-quality Power Field Effect Transistor that brings unmatched performance and reliability to your switching applications. With a single configuration featuring a built-in diode, this N-CHANNEL transistor is designed for enhanced efficiency and durability. The small outline package makes it perfect for space-constrained projects, while the maximum operating temperature of 150°C ensures consistent performance under any conditions. Trust ROHM's expertise in semiconductor technology to deliver a product that exceeds expectations, providing you with the value and benefits you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable operation even in harsh conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally have better performance characteristics and lower on-resistance compared to P-channel FETs, making them suitable for high-efficiency applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient and safe switching operations, improving the overall performance of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast response times and minimal power loss during operation.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs, saving space and simplifying the manufacturing process.

Minimum DS Breakdown Voltage: 30 V

With a high breakdown voltage, this FET can handle high voltage loads without risking damage to the transistor.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard PCB layouts, making it easy to integrate into existing designs.

Terminal Form: GULL WING

Gull wing terminals offer strong mechanical stability and are well-suited for surface mount applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are easier to drive and control, making them ideal for power management applications.

Maximum Pulsed Drain Current (IDM): 18 A

High pulsed drain current rating allows for handling of sudden spikes in current without failure, ensuring reliability in demanding conditions.

Technical Specifications

Power Field Effect Transistors (FET) RTQ045N03TR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

4.5 A

Maximum Drain Current (ID):

4.5 A

Maximum Drain-Source On Resistance:

.06 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

18 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RTQ045N03TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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