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IMT1AT110

ROHM

IMT1AT110 by ROHM

ROHM's IMT1AT110 is a PNP BJT with 2 elements, ideal for amplifier applications. Features include VCEsat of 0.5V, hFE of 120, and fT of 140MHz. With a max operating temp of 150°C and peak reflow temp at 260°C, it offers high performance in a small outline package.

Median Price

$0.176

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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DigiKey

USA . 4,795 parts In-Stock

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$0.470

100+ parts

$0.181

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$0.121

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$0.088

4,795

$0.470

$0.181

$0.121

$0.088

Mouser Electronics

USA . 9,360 parts In-Stock

1+ parts

$0.490

100+ parts

$0.192

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$0.129

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$0.098

9,360

$0.490

$0.192

$0.129

$0.098

Newark

USA . 1,964 parts In-Stock

1+ parts

$0.494

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$0.193

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$0.128

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1,964

$0.494

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$0.128

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Chip1Stop

Japan . 4,250 parts In-Stock

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$0.146

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$0.077

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$0.146

$0.077

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Verical

USA . 2,988 parts In-Stock

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$0.172

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$0.112

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$0.067

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$0.112

$0.067

Farnell

UK . 2,370 parts In-Stock

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$0.154

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$0.102

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$0.086

2,370

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$0.154

$0.102

$0.086

Element14

Singapore . 2,370 parts In-Stock

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$0.176

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$0.105

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2,370

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$0.176

$0.105

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Distributors (In-Stock)

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IBS Electronics

USA . 18,000 parts In-Stock

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$0.058

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$0.058

Bristol Electronics

USA . 16,598 parts In-Stock

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ComSIT Distribution GmbH

Germany . 15,097 parts In-Stock

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ABC Electronics Ltd.

UK . 13,000 parts In-Stock

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NAC Semi

USA . 12,000 parts In-Stock

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$0.071

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$0.071

Voyager Components

USA . 9,000 parts In-Stock

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Standard Data Resources

USA . 9,000 parts In-Stock

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PC Components Company LLC

USA . 6,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 6,000 parts In-Stock

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ComSIT USA

USA . 6,000 parts In-Stock

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Avant Electronics Limited

UK . 5,501 parts In-Stock

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Rutronik

Germany . 3,000 parts In-Stock

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$0.036

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$0.036

LIBRA Elektronik GmbH

Germany . 2,800 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,500 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Semtec, LLC

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Ampacity Inc.

Singapore . 5,936 parts In-Stock

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$0.189

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$0.189

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CoreStaff

Japan . 2,998 parts In-Stock

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$0.224

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$0.088

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$0.075

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2,998

$0.224

$0.088

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Advanced Electronics

New Zealand . 48 parts In-Stock

1+ parts

$0.727

100+ parts

$0.662

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$0.596

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48

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Kepictronics

USA . 30,000 parts In-Stock

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Perfect Parts

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Amble Industries

USA . 9,000 parts In-Stock

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Epart123

USA . 6,000 parts In-Stock

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$0.095

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Authorized Procurement Solutions

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Assy Fe

Spain . 4,814 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Continental Prestige Electronics

USA . 2,969 parts In-Stock

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$0.138

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$0.073

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$0.057

2,969

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RC Electronics

USA . 2,700 parts In-Stock

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$0.120

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$0.120

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$0.110

2,700

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$0.110

Argo Parts USA

USA . 2,091 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Discover the power of innovation with the IMT1AT110 by ROHM. This Small Signal Bipolar Junction Transistor offers unparalleled quality and reliability, thanks to its manufacturer's dedication to excellence. Perfect for amplifier applications, this PNP transistor provides high performance in a compact package. Experience the benefits of its 0.5V VCEsat and 120 minimum DC current gain, delivering exceptional value to customers seeking top-notch electronic components. Trust ROHM for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material for easy handling and protection of the transistor.

Polarity or Channel Type: PNP

Suitable for use in amplifiers and other applications where PNP transistors are preferred.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits, ensuring optimal performance in such applications.

Maximum VCEsat: 0.5 V

Low VCEsat helps in minimizing power losses and improving efficiency.

Surface Mount: YES

Can be easily mounted on PCBs, saving space and facilitating automated assembly processes.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures reliable amplification of signals.

Maximum Operating Temperature: 150 °C

Can operate at higher temperatures without performance degradation, suitable for various environments.

Maximum Collector-Emitter Voltage: 50 V

Sufficient voltage handling capability for a wide range of applications.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels, suitable for small signal applications.

Nominal Transition Frequency (fT): 140 MHz

High transition frequency allows for high-frequency signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) IMT1AT110 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

IMT1AT110 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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