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2SB1690KT146

ROHM

2SB1690KT146 by ROHM

ROHM 2SB1690KT146 is a PNP BJT transistor with max. collector current of 2A and min. DC current gain of 270. It has a max. power dissipation of 0.2W, suitable for amplifier applications due to its high transition frequency of 360MHz and operating temp up to 150°C.

Median Price

$0.713

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Mouser Electronics

USA . 2,236 parts In-Stock

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$0.720

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$0.291

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$0.196

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$0.152

2,236

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$0.291

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$0.152

DigiKey

USA . 2,493 parts In-Stock

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$0.770

100+ parts

$0.308

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$0.210

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$0.157

2,493

$0.770

$0.308

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$0.157

Chip1Stop

Japan . 4,017 parts In-Stock

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-

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$0.274

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$0.187

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$0.165

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$0.274

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Verical

USA . 2,800 parts In-Stock

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$0.706

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2,800

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$0.706

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Semi Source

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Semtec, LLC

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41

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CoreStaff

Japan . 2,800 parts In-Stock

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$0.288

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$0.166

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$0.113

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2,800

$0.288

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Perfect Parts

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RC Electronics

USA . 9,900 parts In-Stock

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$0.200

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Kepictronics

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iodParts Technologies Inc.

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Overview

Enhance your electronics projects with the high-quality 2SB1690KT146 PNP transistor by ROHM. Designed for amplifier applications, this small signal BJT offers reliable performance and efficiency. With a maximum collector current of 2A and a transition frequency of 360MHz, this transistor is perfect for amplifying signals in various circuits. Trust in ROHM's reputation for excellence and innovation, and take advantage of the value and benefits that the 2SB1690KT146 transistor brings to your designs. Elevate your projects with this versatile component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and reliability of the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into existing circuits and designs that require PNP transistors.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easier to use in amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Surface Mount: YES

The surface mount capability makes it suitable for compact designs and automated assembly processes, saving space and time.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on circuit boards, optimizing space utilization.

Terminal Form: GULL WING

The gull-wing terminal form provides secure and reliable connections, reducing the risk of disconnections or poor contact.

No. of Terminals: 3

The three terminals allow for easy connection and control of the transistor in various circuit configurations.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, the transistor can handle high power levels without overheating or damage.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes it suitable for compact designs and space-constrained applications.

Minimum DC Current Gain (hFE): 270

The high minimum DC current gain ensures a stable and reliable amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable operation in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 12 V

With a maximum collector-emitter voltage of 12V, the transistor can handle high voltage signals without breakdown.

Transistor Element Material: SILICON

The use of silicon material for the transistor element ensures high performance and reliability in various applications.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2A, the transistor can handle high current levels in amplification and switching applications.

Terminal Finish: TIN SILVER COPPER

The tin, silver, copper terminal finish provides corrosion resistance and ensures long-term reliability of the connections.

Terminal Position: DUAL

The dual terminal position allows for flexible mounting and connection options in the circuit design.

Maximum Time At Peak Reflow Temperature (s): 10

The short peak reflow time of 10 seconds ensures efficient and reliable soldering during assembly processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures proper soldering and reliability of the connections in the circuit.

Nominal Transition Frequency (fT): 360 MHz

The high nominal transition frequency of 360MHz allows for fast signal switching and amplification in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1690KT146 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

270

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB1690KT146 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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