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RF5110GTR13

Rf Micro Devices

RF5110GTR13 by Rf Micro Devices

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

RF & Microwave Amplifiers RF5110GTR13 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Rf Micro Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

32 dB

Maximum Input Power (CW):

13 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Frequency:

915 MHz

Minimum Operating Frequency:

880 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC16,.12SQ,20

Power Supplies (V):

3/5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Technology:

Terminal Finish:

Matte Tin (Sn) - annealed

Maximum Voltage Standing Wave Ratio:

10

Trade Compliance

RF5110GTR13 RF & Microwave trade compliance attributes, and parameters.

ECCN

5A991.G

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

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