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HAF1010RJ

Renesas Technology

HAF1010RJ by Renesas Technology

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Finish: TIN LEAD; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 137 parts In-Stock

1+ parts

$0.155

100+ parts

-

1k+ parts

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10k+ parts

$0.149

137

$0.155

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-

$0.149

Northwest PG Solutions

USA . 1,011 parts In-Stock

1+ parts

$0.171

100+ parts

-

1k+ parts

-

10k+ parts

$0.150

1,011

$0.171

-

-

$0.150

Authorized Procurement Solutions

USA . 9,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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9,000

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A-Z Elektronik GmbH

Germany . 344 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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344

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Technical Specifications

Power Field Effect Transistors (FET) HAF1010RJ attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Technology

Specs

Additional Features:

BUILT-IN THE OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Maximum Drain-Source On Resistance:

.34 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

10 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

HAF1010RJ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Technology

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