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2SJ181(S)TR

Renesas Technology

2SJ181(S)TR by Renesas Technology

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 2;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 715 parts In-Stock

1+ parts

$0.744

100+ parts

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1k+ parts

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10k+ parts

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715

$0.744

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Northwest PG Solutions

USA . 1,488 parts In-Stock

1+ parts

$0.818

100+ parts

-

1k+ parts

-

10k+ parts

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1,488

$0.818

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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30,000

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Technical Specifications

Power Field Effect Transistors (FET) 2SJ181(S)TR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Technology

Specs

Configuration:

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

.5 A

Maximum Drain-Source On Resistance:

25 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SJ181(S)TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Technology

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