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2SJ117

Renesas Technology

2SJ117 by Renesas Technology

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 400 V; Package Shape: RECTANGULAR; Qualification: Not Qualified;

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

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Whistler Technology

UK . 30 parts In-Stock

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30

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Huijzer Components

Netherlands . 25 parts In-Stock

1+ parts

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25

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GES GmbH

Germany . 12 parts In-Stock

1+ parts

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12

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 358 parts In-Stock

1+ parts

$1.730

100+ parts

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358

$1.730

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Northwest PG Solutions

USA . 1,288 parts In-Stock

1+ parts

$1.903

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1,288

$1.903

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Technical Specifications

Power Field Effect Transistors (FET) 2SJ117 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Technology

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

400 V

Maximum Drain Current (ID):

2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

4 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SJ117 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Technology

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