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2SD2247CRR

Renesas Technology

2SD2247CRR by Renesas Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 341 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$4.229

10k+ parts

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341

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$4.229

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Northwest PG Solutions

USA . 169 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$4.273

10k+ parts

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169

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$4.273

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD2247CRR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Technology

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD2247CRR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Technology

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