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UPA603T

Renesas Electronics

UPA603T by Renesas Electronics

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Transistor Element Material: SILICON; Terminal Position: DUAL;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Assy Fe

Spain . 5,300 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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5,300

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Technical Specifications

Small Signal Field Effect Transistors (FET) UPA603T attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Configuration:

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (Abs) (ID):

.1 A

Maximum Drain Current (ID):

.1 A

Maximum Drain-Source On Resistance:

100 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

UPA603T Transistors trade compliance attributes, and parameters.

ECCN

5A002

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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