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NP90N03VUG-E1-AY

Renesas Electronics

NP90N03VUG-E1-AY by Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; Maximum Drain-Source On Resistance: .0032 ohm; Maximum Pulsed Drain Current (IDM): 360 A;

Median Price

$1.900

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

$1.640

1k+ parts

$1.470

10k+ parts

$1.380

10,000

-

$1.640

$1.470

$1.380

DigiKey

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.900

10k+ parts

-

10,000

-

-

$1.900

-

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.950

10k+ parts

-

10,000

-

-

$1.950

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 9,842 parts In-Stock

1+ parts

$1.560

100+ parts

-

1k+ parts

-

10k+ parts

-

9,842

$1.560

-

-

-

Component Stockers USA

USA . 6,822 parts In-Stock

1+ parts

$1.870

100+ parts

$1.770

1k+ parts

$1.590

10k+ parts

$1.590

6,822

$1.870

$1.770

$1.590

$1.590

Microchip USA

USA . 339 parts In-Stock

1+ parts

$11.440

100+ parts

-

1k+ parts

-

10k+ parts

-

339

$11.440

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Perfect Parts

USA . 2,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,800

-

-

-

-

Technical Specifications

Power Field Effect Transistors (FET) NP90N03VUG-E1-AY attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Avalanche Energy Rating (EAS):

168 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

90 A

Maximum Drain Current (ID):

90 A

Maximum Drain-Source On Resistance:

.0032 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

360 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NP90N03VUG-E1-AY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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