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71V256SA12YGI8

Renesas Electronics

71V256SA12YGI8 by Renesas Electronics

Renesas Electronics' 71V256SA12YGI8 is a 32Kx8 CACHE SRAM with 3.3V supply, operating at -40 to 85 °C. It features 12ns access time, 3-STATE output, and parallel interface. Ideal for industrial applications requiring fast memory access in compact designs.

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3

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1k+

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VNN

France . 7,028 parts In-Stock

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Vyrian

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Nova Conductors

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AZTECH Wire

Italy . 576 parts In-Stock

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Semicontronic

India . 764 parts In-Stock

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$27.000

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$26.325

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$26.190

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Ampacity Inc.

Singapore . 627 parts In-Stock

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Continental Prestige Electronics

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Microchip USA

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Argo Parts USA

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Bastille Electronics

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Robosynatics

Brazil . 20 parts In-Stock

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Lucentia Tech

USA . 20 parts In-Stock

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Overview

Experience lightning-fast performance and reliable data storage with the Renesas Electronics 71V256SA12YGI8 CACHE SRAM. Renowned for its quality and cutting-edge technology, Renesas Electronics delivers a top-tier SRAM solution that is perfect for industrial applications. With a memory density of 262144 bits and a maximum access time of just 12 ns, this CACHE SRAM offers unbeatable speed and efficiency. Trust Renesas Electronics to provide you with the superior performance and value you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the product lightweight and durable, ideal for use in various electronic devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for efficient and flexible data processing in real-time applications.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage ensures compatibility with a wide range of electronic systems and reduces power consumption.

Memory IC Type: CACHE SRAM

Being a cache SRAM, this product offers fast access times and high-speed data storage capabilities, making it suitable for performance-critical applications.

Technical Specifications

SRAM 71V256SA12YGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

12 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-J28

JESD-609 Code:

e3

Length:

17.9324 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ28,.34

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

3.556 mm

Maximum Standby Current:

.002 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

90 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

7.5184 mm

Trade Compliance

71V256SA12YGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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