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70V261S35PFG8

Renesas Electronics

70V261S35PFG8 by Renesas Electronics

The Renesas Electronics 70V261S35PFG8 is a 16Kx16 MULTI-PORT SRAM with 3.3V supply voltage, operating in asynchronous mode with 35ns access time. It features a low profile flatpack package and is suitable for applications requiring fast and efficient memory storage and retrieval.

Median Price

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Lifecycle Status

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3

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1k+

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VNN

France . 3,520 parts In-Stock

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Vyrian

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Nova Conductors

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Ampacity Inc.

Singapore . 791 parts In-Stock

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AZTECH Wire

Italy . 337 parts In-Stock

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Continental Prestige Electronics

USA . 4,662 parts In-Stock

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Argo Parts USA

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Microchip USA

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Bastille Electronics

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Overview

Unlock unparalleled performance with the 70V261S35PFG8 by Renesas Electronics, a top-of-the-line SRAM memory IC designed to elevate your projects to new heights. Renowned for their cutting-edge technology and superior quality, Renesas Electronics delivers industry-leading solutions that guarantee reliability and efficiency. Ideal for a wide range of applications, this multi-port SRAM offers lightning-fast access times and low standby current, ensuring seamless operation and maximum productivity. Trust Renesas Electronics to provide the innovation and performance you need to stay ahead of the game. Elevate your designs with the 70V261S35PFG8 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, resulting in easier handling and increased longevity.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving space and simplifying assembly processes.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures compatibility with a wide range of systems and reduces the risk of voltage fluctuations.

No. of Terminals: 100

Having a high number of terminals allows for multiple connection points, enabling versatile integration with other components and systems.

Technology: CMOS

Utilizing CMOS technology offers low power consumption, high speed performance, and compatibility with a variety of digital systems, making it an efficient choice for memory applications.

Maximum Access Time: 35 ns

With a fast maximum access time of 35 nanoseconds, this SRAM product provides quick read and write operations, improving overall system performance.

Technical Specifications

SRAM 70V261S35PFG8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

35 ns

Input/Output Type:

COMMON

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e3

Length:

14 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

100

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16KX16

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Standby Current:

.006 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

140 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

14 mm

Trade Compliance

70V261S35PFG8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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