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PSMN070-200B

Philips Semiconductors

PSMN070-200B by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 230 W; No. of Elements: 1; JESD-609 Code: e3;

Median Price

$1.280

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Rochester

USA . 800 parts In-Stock

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Chip Stock

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Vyrian

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Cyclops Electronics Ltd

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Anansix

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Bristol Electronics

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LIBRA Elektronik GmbH

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Inventory MP

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Pegasus Components GmbH

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AZTECH Wire

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Microchip USA

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Technical Specifications

Power Field Effect Transistors (FET) PSMN070-200B attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

33 A

Maximum Drain Current (ID):

33 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Trade Compliance

PSMN070-200B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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