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PIP3118-B

Philips Semiconductors

PIP3118-B by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Moisture Sensitivity Level (MSL): 1;

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Anansix

USA . 1,284 parts In-Stock

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Vyrian

USA . 902 parts In-Stock

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Digiode

USA . 149 parts In-Stock

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149

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Distributors (Availability)

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One Stop Electronics

USA . 890 parts In-Stock

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$34.500

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890

$34.500

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UNI Independent Distributors

Spain . 8,080 parts In-Stock

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Corphita

USA . 1,850 parts In-Stock

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1,850

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Technical Specifications

Power Field Effect Transistors (FET) PIP3118-B attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Trade Compliance

PIP3118-B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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