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PHN220

Philips Semiconductors

PHN220 by Philips Semiconductors

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,668 parts In-Stock

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Vyrian

USA . 1,863 parts In-Stock

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Digiode

USA . 1,301 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 1,590 parts In-Stock

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$38.050

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$38.050

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UNI Independent Distributors

Spain . 1,289 parts In-Stock

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Corphita

USA . 345 parts In-Stock

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345

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Technical Specifications

Power Field Effect Transistors (FET) PHN220 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Maximum Drain Current (Abs) (ID):

2.6 A

Maximum Drain Current (ID):

2.6 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

PHN220 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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