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PDTD113ET

Philips Semiconductors

PDTD113ET by Philips Semiconductors

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON; JESD-609 Code: e0;

Median Price

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4

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1k+

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ComSIT Distribution GmbH

Germany . 9,000 parts In-Stock

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Digiode

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Vyrian

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Anansix

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AZTECH Wire

Italy . 3,414 parts In-Stock

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One Stop Electronics

USA . 1,574 parts In-Stock

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Authorized Procurement Solutions

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Supply Digital

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UNI Independent Distributors

Spain . 1,971 parts In-Stock

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Perfect Parts

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Corphita

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTD113ET attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

33

JESD-609 Code:

e0

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Transistor Element Material:

SILICON

Trade Compliance

PDTD113ET Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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