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BC636T/R

Philips Semiconductors

BC636T/R by Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 40;

Median Price

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Digiode

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Vyrian

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Anansix

USA . 2,068 parts In-Stock

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One Stop Electronics

USA . 901 parts In-Stock

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Native Components

USA . 666 parts In-Stock

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UNI Independent Distributors

Spain . 4,846 parts In-Stock

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Corphita

USA . 3,573 parts In-Stock

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Northwest PG Solutions

USA . 2,177 parts In-Stock

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Technical Specifications

Other Function Transistors BC636T/R attributes and parameters. Explore more Other Function Transistors devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

BC636T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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