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VS003E4

Onsemi

VS003E4 by Onsemi

VS003E4 by Onsemi is a surface mount diode with max reverse current of 1uA, reverse test voltage of 3.4V, and max operating temp of 150 °C. It is ideal for applications requiring low power dissipation and high reliability in temperature-sensitive environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,773 parts In-Stock

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Digiode

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Problanco Electronics

Mexico . 4,806 parts In-Stock

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TANS Electronics

Latvia . 4,352 parts In-Stock

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Kulean Microsystems

USA . 3,680 parts In-Stock

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SupplyDigital Components

Austria . 1,938 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 658 parts In-Stock

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Corohmni

South Africa . 454 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the VS003E4 by Onsemi. Crafted with precision and expertise, Onsemi is a trusted manufacturer known for delivering top-notch quality products. This diode offers unrivaled performance with a maximum reverse current of 1uA and a reverse test voltage of 3.4V. Ideal for a wide range of applications, the VS003E4 is perfect for those seeking reliability and efficiency in their projects. Elevate your creations with this versatile diode that ensures optimal functionality and longevity. Experience the difference with Onsemi's VS003E4 today!

Feature Benefit Bullets

Surface Mount: YES

This product is surface mountable, making it easy to integrate into electronic circuit boards for compact and efficient designs.

Maximum Reverse Current: 1 uA

With a low maximum reverse current, this diode ensures minimal power loss and high efficiency in applications.

Reverse Test Voltage: 3.4 V

The reverse test voltage of 3.4 V provides a good margin of safety to protect the diode from reverse currents or voltages, ensuring reliability.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this diode is suitable for a wide range of environments and applications without performance degradation.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C allows this diode to function effectively even in very cold conditions, expanding its utility.

Maximum Power Dissipation: 0.1 W

The low power dissipation of 0.1 W ensures that the diode operates efficiently and does not generate excess heat during use.

Maximum Forward Voltage (VF): 0.65 V

The low forward voltage of 0.65 V indicates that this diode has minimal voltage drop when conducting forward current, improving overall circuit efficiency.

Maximum Repetitive Peak Reverse Voltage: 4.5 V

With a high maximum repetitive peak reverse voltage, this diode can withstand voltage spikes or transients without damage, enhancing system durability.

Technical Specifications

Other Function Diodes VS003E4 attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

.65 V

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Power Dissipation:

.1 W

Maximum Repetitive Peak Reverse Voltage:

4.5 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

3.4 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

VS003E4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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