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US2AA

Onsemi

US2AA by Onsemi

US2AA diode by Onsemi is a single-config, surface-mount rectifier with a max reverse recovery time of 0.05 us and max output current of 1.5 A. It operates in temperatures ranging from -55 to 150 °C and is ideal for super fast recovery applications.

Median Price

$0.396

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 50 parts In-Stock

1+ parts

$0.201

100+ parts

$0.183

1k+ parts

$0.165

10k+ parts

-

50

$0.201

$0.183

$0.165

-

Mouser Electronics

USA . 6,070 parts In-Stock

1+ parts

$0.590

100+ parts

$0.231

1k+ parts

$0.168

10k+ parts

$0.099

6,070

$0.590

$0.231

$0.168

$0.099

DigiKey

USA . 858 parts In-Stock

1+ parts

$0.590

100+ parts

$0.231

1k+ parts

$0.155

10k+ parts

$0.108

858

$0.590

$0.231

$0.155

$0.108

Rochester

USA . 342 parts In-Stock

1+ parts

-

100+ parts

$0.116

1k+ parts

$0.097

10k+ parts

$0.086

342

-

$0.116

$0.097

$0.086

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,255 parts In-Stock

1+ parts

$0.090

100+ parts

-

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1,255

$0.090

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Vyrian

USA . 2,231 parts In-Stock

1+ parts

$0.095

100+ parts

-

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-

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2,231

$0.095

-

-

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Ozdisan Elektronik

Türkiye . 18 parts In-Stock

1+ parts

$45.928

100+ parts

-

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-

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18

$45.928

-

-

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Chip Stock

USA . 20,000 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,108 parts In-Stock

1+ parts

$0.086

100+ parts

-

1k+ parts

-

10k+ parts

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1,108

$0.086

-

-

-

Corohmni

South Africa . 117 parts In-Stock

1+ parts

$0.095

100+ parts

-

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-

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117

$0.095

-

-

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.201

100+ parts

$0.183

1k+ parts

$0.165

10k+ parts

-

50

$0.201

$0.183

$0.165

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Metaverse IC Inc.

Canada . 125,600 parts In-Stock

1+ parts

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125,600

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QUARKTWIN TECHNOLOGY LTD

USA . 17,892 parts In-Stock

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17,892

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Kulean Microsystems

USA . 6,872 parts In-Stock

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6,872

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SupplyDigital Components

Austria . 5,135 parts In-Stock

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5,135

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TANS Electronics

Latvia . 2,856 parts In-Stock

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2,856

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Problanco Electronics

Mexico . 2,733 parts In-Stock

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2,733

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Supply Digital

USA . 1,501 parts In-Stock

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1,501

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Microchip USA

USA . 424 parts In-Stock

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424

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UHIMA Technologies

Türkiye . 35 parts In-Stock

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35

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Overview

Enhance your electronic devices with the high-quality US2AA diode by Onsemi. As a leader in the industry, Onsemi ensures top-notch performance and reliability in all their products. The US2AA is perfect for super fast recovery applications, offering a maximum output current of 1.5A and a maximum forward voltage of 1V. With a small outline package style and dual terminal position, this rectifier diode is versatile and efficient for a wide range of uses. Trust Onsemi to deliver exceptional value and innovation with the US2AA diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this product lightweight and durable, making it suitable for a wide range of applications.

Surface Mount: YES

Being surface mountable makes this diode easy to integrate into circuit boards, saving space and simplifying the manufacturing process.

Maximum Reverse Recovery Time: 0.05 us

The super fast reverse recovery time of 0.05 microseconds ensures efficient and rapid switching performance, making this diode ideal for high-speed applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this diode can withstand elevated temperatures, increasing its reliability in harsh environments.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures that this diode meets automotive industry requirements for reliability and quality, making it a trusted choice for automotive applications.

Technical Specifications

Diodes & Rectifiers US2AA attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

SUPER FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.05 us

Reverse Test Voltage:

50 V

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

US2AA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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