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TRA2532G

Onsemi

TRA2532G by Onsemi

TRA2532G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 24-32V breakdown voltage, ideal for surge protection in electronic circuits. Featuring AVALANCHE technology, it operates b/w -65 °C to 175°C and comes in a ceramic, metal-sealed co-fired package for surface mount applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,508 parts In-Stock

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Vyrian

USA . 1,355 parts In-Stock

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1,355

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 7,968 parts In-Stock

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7,968

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Problanco Electronics

Mexico . 7,546 parts In-Stock

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TANS Electronics

Latvia . 6,285 parts In-Stock

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Corphita

USA . 1,683 parts In-Stock

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Kulean Microsystems

USA . 1,163 parts In-Stock

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Corohmni

South Africa . 268 parts In-Stock

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UHIMA Technologies

Türkiye . 61 parts In-Stock

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Overview

Discover the TRA2532G by Onsemi, a top-quality transient suppression device designed to protect your electronics with precision and reliability. Manufactured by industry leader Onsemi, this product offers unparalleled protection against voltage spikes and surges, ensuring the longevity of your valuable equipment. Ideal for a wide range of applications, from consumer electronics to industrial machinery, the TRA2532G provides peace of mind and superior performance. Trust in Onsemi's expertise and invest in the TRA2532G for unbeatable quality and protection.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent thermal conductivity and high mechanical strength, ensuring durability and stability in various operating conditions.

Surface Mount: YES

Ease of installation and compact design make it suitable for space-constrained applications.

Maximum Operating Temperature: 175 °C

Capable of withstanding high temperatures without compromising performance, ideal for demanding environments.

Minimum Breakdown Voltage: 24 V

Low breakdown voltage offers effective protection against voltage spikes and surges.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression, ensuring efficient voltage clamping during surge events.

Technical Specifications

Transient Suppression Devices TRA2532G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

24 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-CEDB-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

END

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TRA2532G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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