Loading...

TRA2532

Onsemi

TRA2532 by Onsemi

TRA2532 by Onsemi is a single TRANS VOLTAGE SUPPRESSOR DIODE with 24-32V breakdown voltage. It features AVALANCHE technology, UNIDIRECTIONAL polarity, and SILICON diode element material. Ideal for transient suppression in electronics applications requiring high breakdown voltages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 64,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

64,000

-

-

-

-

Vyrian

USA . 5,147 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,147

-

-

-

-

Digiode

USA . 1,729 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,729

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 1,214 parts In-Stock

1+ parts

$12.860

100+ parts

-

1k+ parts

-

10k+ parts

-

1,214

$12.860

-

-

-

SupplyDigital Components

Austria . 6,587 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,587

-

-

-

-

Kulean Microsystems

USA . 6,466 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,466

-

-

-

-

Problanco Electronics

Mexico . 6,228 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,228

-

-

-

-

TANS Electronics

Latvia . 4,704 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,704

-

-

-

-

Corphita

USA . 843 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

843

-

-

-

-

UHIMA Technologies

Türkiye . 736 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

736

-

-

-

-

Corohmni

South Africa . 175 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

175

-

-

-

-

Overview

Unlock unparalleled protection with the TRA2532 by Onsemi, a cutting-edge Transient Suppression Device that guarantees top-tier quality and reliability. Manufactured by industry leader Onsemi, this product is designed to safeguard your electronic components from voltage spikes, ensuring optimal performance and longevity. Perfect for a wide range of applications, the TRA2532 offers customers unmatched value, benefits, and advantages, making it an essential investment for any project requiring superior transient suppression capabilities.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic, metal-sealed cofired package body material ensures durability and reliability in various operating conditions.

Config: SINGLE

The single configuration simplifies installation and maintenance of the transient suppression device.

Surface Mount: YES

The surface mount capability enables easy PCB assembly and reduces space requirement.

Package Shape: ROUND

The round package shape allows for efficient heat dissipation and optimal component placement on the PCB.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and reduces the chances of wiring errors.

Package Style (Meter): DISK BUTTON

The disk button package style offers a compact design and ease of integration into existing systems.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and solderability for secure and stable connections.

Minimum Breakdown Voltage: 24 V

The minimum breakdown voltage of 24 V ensures effective protection against voltage spikes and surges.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this device can withstand high-temperature soldering processes during assembly.

Maximum Breakdown Voltage: 32 V

The maximum breakdown voltage of 32 V provides a safety margin and protects sensitive components in the circuit.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The trans voltage suppressor diode type ensures efficient suppression of transient voltages and protects electronic devices.

Technology: AVALANCHE

Using avalanche technology enhances the device's ability to handle high transient currents without degradation.

Terminal Form: NO LEAD

The no-lead terminal form eliminates the risk of lead contamination and ensures environmental friendliness.

Maximum Repetitive Peak Reverse Voltage: 23 V

The maximum repetitive peak reverse voltage of 23 V provides reliable protection against reverse voltage conditions.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the device only conducts in one direction, enhancing its efficiency in transient suppression.

Diode Element Material: SILICON

The silicon diode element material offers high conductivity and fast response times for effective transient voltage suppression.

Technical Specifications

Transient Suppression Devices TRA2532 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

24 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-CEDB-N2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

23 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

END

Trade Compliance

TRA2532 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1