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TCA0372DM2ELG

Onsemi

TCA0372DM2ELG by Onsemi

TCA0372DM2ELG by Onsemi is a dual operational amplifier with 20000uV max input offset voltage, 90dB nominal CMRR, and 1.4V/us min slew rate. Ideal for automotive applications due to its -40 to 125 °C operating temp range and VFB architecture.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 4,858 parts In-Stock

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Chip Stock

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Digiode

USA . 1,737 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,022 parts In-Stock

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NexGen Digital

USA . 994 parts In-Stock

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Ampacity Inc.

Singapore . 1,598 parts In-Stock

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$1.410

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AZTECH Wire

Italy . 601 parts In-Stock

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$8.470

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Kepictronics

USA . 14,780 parts In-Stock

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TANS Electronics

Latvia . 8,181 parts In-Stock

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Problanco Electronics

Mexico . 6,305 parts In-Stock

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SupplyDigital Components

Austria . 5,561 parts In-Stock

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Kulean Microsystems

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Lixinc

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Perfect Parts

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UHIMA Technologies

Türkiye . 794 parts In-Stock

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Corphita

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ChipstoGo Electronic ltd

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Microchip USA

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Corohmni

South Africa . 81 parts In-Stock

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Overview

Discover the TCA0372DM2ELG by Onsemi, a high-quality operational amplifier designed to meet your specific needs. With Onsemi's renowned reputation for excellence in manufacturing, this product offers unbeatable performance and reliability. Ideal for applications in automotive technology, audio equipment, and more, this operational amplifier provides impressive benefits such as precise voltage feedback, low power consumption, and wide temperature range capabilities. Elevate your projects with the TCA0372DM2ELG from Onsemi and experience the value and advantages it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, suitable for various applications.

Maximum Input Offset Voltage: 20000 uV

Lower input offset voltage helps in minimizing errors in the output signal, leading to accurate amplification.

Maximum Average Bias Current (IIB): 0.05 uA

Low bias current ensures minimal power consumption and reduces the impact on the input signal.

Nominal Common Mode Reject Ratio: 90 dB

High common mode reject ratio indicates better rejection of noise or interference signals, resulting in a cleaner output.

Nominal Supply Voltage / Vsup (V): 15

A stable nominal supply voltage of 15V ensures consistent performance of the operational amplifier.

Minimum Slew Rate: 1 V/us

The minimum slew rate of 1 V/us indicates the amplifier's ability to respond quickly to changes in the input signal, making it suitable for dynamic applications.

Maximum Operating Temperature: 125 °C

The operational amplifier can function effectively even at high temperatures, ensuring reliability in harsh operating conditions.

Frequency Compensation: YES

Frequency compensation improves the stability of the amplifier and ensures consistent performance across different frequency ranges.

Minimum Voltage Gain: 30000

High minimum voltage gain allows for significant amplification of the input signal without compromising on signal integrity.

Technology: BIPOLAR

Bipolar technology offers high precision and low noise performance, making it suitable for sensitive amplification applications.

Technical Specifications

Operational Amplifiers (Op Amps) TCA0372DM2ELG attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

Yes

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.4 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

20000 uV

Minimum Voltage Gain:

30000

Minimum Slew Rate:

1 V/us

Nominal Slew Rate:

1.4 V/us

Peak Bias Current:

50 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

20 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-20 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

14 mA

Physical Characteristics

Length:

0.402 in (10.2 mm)

Width:

0.208 in (5.275 mm)

Maximum Seated Height:

0.081 in (2.05 mm)

Total Terminals:

16

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

3

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP16,.3

Trade Compliance

TCA0372DM2ELG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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