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TCA0372BDP1

Onsemi

TCA0372BDP1 by Onsemi

TCA0372BDP1 by Onsemi is an Operational Amplifier with 2 functions, 20000 uV Max Input Offset Voltage, and 90 dB Nominal Common Mode Reject Ratio. It operates at -40 to 125 °C and is ideal for automotive applications due to its BIPOLAR technology and VOLTAGE-FEEDBACK architecture.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,416 parts In-Stock

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Digiode

USA . 1,944 parts In-Stock

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AZTECH Wire

Italy . 652 parts In-Stock

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$16.000

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652

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TANS Electronics

Latvia . 5,406 parts In-Stock

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Kulean Microsystems

USA . 1,469 parts In-Stock

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Corphita

USA . 1,381 parts In-Stock

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SupplyDigital Components

Austria . 1,206 parts In-Stock

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UHIMA Technologies

Türkiye . 371 parts In-Stock

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Corohmni

South Africa . 325 parts In-Stock

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Problanco Electronics

Mexico . 311 parts In-Stock

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Microchip USA

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Overview

Enhance your electronics projects with the TCA0372BDP1 by Onsemi, a top-quality operational amplifier designed to deliver exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this op amp offers unmatched precision and versatility for a wide range of applications. Whether you're working on automotive systems, industrial controls, or audio equipment, this innovative product provides the value, benefits, and advantages you need to take your designs to the next level. Trust Onsemi's expertise and choose the TCA0372BDP1 for all your amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Maximum Input Offset Voltage: 20000 uV

The low input offset voltage ensures accurate signal processing and minimizes errors in the output.

Maximum Average Bias Current (IIB): 0.05 uA

The low bias current helps in reducing power consumption and improving overall performance efficiency.

No. of Functions: 2

Having multiple functions in one component reduces the need for additional components, saving space and cost.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio ensures that common mode signals are effectively suppressed, leading to cleaner output signals.

Nominal Supply Voltage / Vsup (V): 15

A suitable supply voltage of 15V provides stable operation and reliable performance.

Frequency Compensation: YES

Frequency compensation ensures stability and prevents oscillations, making the product ideal for various signal processing applications.

Minimum Voltage Gain: 30000

High voltage gain allows for amplification of weak input signals without distortion, making it suitable for precision applications.

Technology: BIPOLAR

Bipolar technology offers high gain and bandwidth, making the product ideal for high-performance applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, the product can perform various mathematical operations on signals, making it versatile and widely used in electronic circuits.

Technical Specifications

Operational Amplifiers (Op Amps) TCA0372BDP1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

Yes

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.4 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

20000 uV

Minimum Voltage Gain:

30000

Minimum Slew Rate:

1 V/us

Nominal Slew Rate:

1.4 V/us

Peak Bias Current:

50 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

20 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-20 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Maximum Supply Current:

14 mA

Physical Characteristics

Length:

0.385 in (9.78 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.175 in (4.45 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Rail

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

TCA0372BDP1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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