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SZMMSZ4712T1G

Onsemi

SZMMSZ4712T1G by Onsemi

SZMMSZ4712T1G by Onsemi is a Zener diode with a 28V nominal reference voltage and 5% max voltage tolerance. It operates in temperatures ranging from -55 to 150 °C and has a max power dissipation of 0.5W. Ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

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Vyrian

USA . 5,223 parts In-Stock

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Digiode

USA . 2,413 parts In-Stock

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AZTECH Wire

Italy . 77 parts In-Stock

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$15.330

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SupplyDigital Components

Austria . 7,323 parts In-Stock

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TANS Electronics

Latvia . 6,309 parts In-Stock

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Problanco Electronics

Mexico . 6,012 parts In-Stock

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Kulean Microsystems

USA . 4,685 parts In-Stock

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UHIMA Technologies

Türkiye . 926 parts In-Stock

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Corphita

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Corohmni

South Africa . 423 parts In-Stock

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Overview

Onsemi's SZMMSZ4712T1G Zener Diode offers top-notch quality and reliability for a wide range of applications. Manufactured by Onsemi, a trusted name in the industry, this Zener diode provides precise voltage regulation and protection against electrical surges. With a maximum voltage tolerance of 5% and a nominal reference voltage of 28V, this diode is ideal for various electronic circuits. Its small outline package and dual terminal position make it easy to integrate into any design. Trust Onsemi's SZMMSZ4712T1G for superior performance and peace of mind in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body ensures durability and protection for the zener diode, making it a reliable choice for long-term use.

Working Test Current: 0.05 mA

The low working test current of 0.05 mA indicates that this zener diode is designed for efficient performance with minimal power consumption.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards, saving space and simplifying the assembly process.

Maximum Voltage Tolerance: 5 %

The tight maximum voltage tolerance of 5% ensures accuracy and reliability in regulating voltage, making it suitable for precision applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this zener diode can withstand elevated temperatures without compromising its performance.

Nominal Reference Voltage: 28 V

The nominal reference voltage of 28 V indicates the specific voltage at which this zener diode is designed to operate, providing a stable reference point for voltage regulation.

Technical Specifications

Zener Diodes SZMMSZ4712T1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

28 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

.05 mA

Trade Compliance

SZMMSZ4712T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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