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SZMMSZ18ET1G

Onsemi

SZMMSZ18ET1G by Onsemi

SZMMSZ18ET1G by Onsemi is a Zener diode with 18V nominal reference voltage, 5% max voltage tolerance, and 45 ohm max dynamic impedance. It is a single-config surface mount diode suitable for applications requiring precise voltage regulation in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,292 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 685 parts In-Stock

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$21.750

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TANS Electronics

Latvia . 7,871 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,357 parts In-Stock

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Problanco Electronics

Mexico . 5,799 parts In-Stock

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Authorized Procurement Solutions

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Corphita

USA . 892 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 644 parts In-Stock

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SupplyDigital Components

Austria . 537 parts In-Stock

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Corohmni

South Africa . 244 parts In-Stock

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Overview

Unleash the power of precision with the SZMMSZ18ET1G by Onsemi. Crafted with unparalleled quality and expertise, this Zener Diode is designed for reliability and efficiency in a variety of applications. From voltage regulation to surge protection, this single-configured diode offers a 5% voltage tolerance and a maximum power dissipation of 0.5W, making it an essential component for your electronic projects. Experience peace of mind knowing that your circuits are in good hands with Onsemi's cutting-edge technology. Elevate your designs with the SZMMSZ18ET1G and unlock endless possibilities.

Feature Benefit Bullets

Working Test Current: 5 mA

This low working test current allows for efficient operation and helps in saving power.

Maximum Voltage Tolerance: 5%

The tight voltage tolerance ensures accuracy in voltage regulation, making it a reliable choice for various electronic circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this Zener diode can handle tough environmental conditions without compromising its performance.

Maximum Dynamic Impedance: 45 ohm

The low dynamic impedance ensures stable and precise voltage regulation, making it suitable for sensitive electronic applications.

Maximum Power Dissipation: 0.5 W

The high maximum power dissipation rating ensures that the Zener diode can handle power surges without getting damaged.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this Zener diode can withstand the soldering process during PCB assembly, ensuring reliable solder joints.

Nominal Reference Voltage: 18 V

The 18 V nominal reference voltage provides a stable reference for voltage regulation in various electronic circuits.

Technical Specifications

Zener Diodes SZMMSZ18ET1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

45 ohm

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Nominal Reference Voltage:

18 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

SZMMSZ18ET1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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