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SZMMBZ5250ELT1G

Onsemi

SZMMBZ5250ELT1G by Onsemi

SZMMBZ5250ELT1G by Onsemi is a Zener diode with 15V reverse test voltage, 6.2mA working current, and 5% voltage tolerance. Ideal for applications requiring precise voltage regulation in compact electronic devices due to its small outline package style and unidirectional polarity.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,978 parts In-Stock

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Digiode

USA . 1,613 parts In-Stock

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AZTECH Wire

Italy . 370 parts In-Stock

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$12.610

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370

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QUARKTWIN TECHNOLOGY LTD

USA . 10,220 parts In-Stock

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Kulean Microsystems

USA . 3,403 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Corphita

USA . 1,843 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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1,800

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UHIMA Technologies

Türkiye . 302 parts In-Stock

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Corohmni

South Africa . 267 parts In-Stock

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SupplyDigital Components

Austria . 201 parts In-Stock

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Problanco Electronics

Mexico . 111 parts In-Stock

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TANS Electronics

Latvia . 5 parts In-Stock

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Overview

Discover the Onsemi SZMMBZ5250ELT1G, a top-quality Zener Diode designed to deliver exceptional performance in a variety of applications. Manufactured by Onsemi, a trusted name in the industry known for their reliability and innovation, this Zener Diode offers customers unparalleled value and benefits. With its high precision and efficiency, this product is perfect for voltage regulation and protection in electronic circuits. Trust Onsemi to provide you with the advanced technology you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the Zener diode, making it suitable for a variety of applications.

Working Test Current: 6.2 mA

Allows for reliable performance under normal operating conditions.

Surface Mount: YES

Facilitates easy and efficient installation on circuit boards.

Maximum Reverse Current: 0.1 uA

Ensures minimal leakage current, maintaining the stability of the circuit.

Maximum Reverse Test Voltage: 15 V

Offers protection against reverse voltage conditions, enhancing the diode's reliability.

Maximum Voltage Tolerance: 5 %

Provides consistency in performance and ensures accurate voltage regulation.

Maximum Operating Temperature: 150 °C

Allows the Zener diode to operate under high temperature conditions, increasing its versatility.

Maximum Power Dissipation: 0.225 W

Handles power dissipation effectively, preventing overheating and ensuring longevity.

Terminal Finish: MATTE TIN

Provides a reliable and durable finish for the terminal connections.

Reference Standard: AEC-Q101

Meets industry standards for automotive-grade electronic components, ensuring quality and reliability.

Technical Specifications

Zener Diodes SZMMBZ5250ELT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Additional Features:

IR-NOM

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

25 ohm

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Maximum Knee Impedance:

600 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

20 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

15 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

6.2 mA

Trade Compliance

SZMMBZ5250ELT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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