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SZBZX84C4V3LT3G

Onsemi

SZBZX84C4V3LT3G by Onsemi

SZBZX84C4V3LT3G by Onsemi is a Zener diode with 4.3V nominal reference voltage and 5mA working test current. It has a max power dissipation of 0.25W, operates b/w -65 to 150 °C, and is ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,120 parts In-Stock

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Digiode

USA . 2,266 parts In-Stock

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Ampacity Inc.

Singapore . 767 parts In-Stock

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$3.010

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767

$3.010

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AZTECH Wire

Italy . 776 parts In-Stock

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$12.930

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QUARKTWIN TECHNOLOGY LTD

USA . 26,432 parts In-Stock

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TANS Electronics

Latvia . 7,199 parts In-Stock

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Kulean Microsystems

USA . 4,553 parts In-Stock

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SupplyDigital Components

Austria . 2,016 parts In-Stock

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Problanco Electronics

Mexico . 929 parts In-Stock

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UHIMA Technologies

Türkiye . 873 parts In-Stock

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Corphita

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Corohmni

South Africa . 106 parts In-Stock

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Overview

Elevate your electronic designs with the SZBZX84C4V3LT3G Zener Diode by Onsemi. Crafted with precision and quality, this small outline package offers reliable voltage regulation for a wide range of applications. With a maximum reverse current of 3 uA and a dynamic impedance of 90 ohm, this Zener diode ensures stable performance in extreme temperatures from -65 °C to 150°C. Trust Onsemi's AEC-Q101 certified technology to deliver unmatched efficiency and durability. Upgrade your projects today with the SZBZX84C4V3LT3G and experience superior quality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode.

Working Test Current: 5 mA

Suitable for various low current applications.

Surface Mount: YES

Allows for easy and convenient installation on PCBs.

Maximum Reverse Current: 3 uA

Provides efficient performance with minimal leakage current.

Maximum Operating Temperature: 150 °C

Ensures stable operation even in high temperature environments.

Maximum Voltage Tolerance: 6.98 %

Ensures accurate voltage regulation.

Maximum Power Dissipation: 0.25 W

Can handle moderate power levels without overheating.

Reference Standard: AEC-Q101

Compliant with automotive industry standards for quality and reliability.

Technical Specifications

Zener Diodes SZBZX84C4V3LT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

90 ohm

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

4.3 V

Maximum Reverse Current:

3 uA

Reverse Test Voltage:

1 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

6.98 %

Working Test Current:

5 mA

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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