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SZBZX84C12ET3G

Onsemi

SZBZX84C12ET3G by Onsemi

SZBZX84C12ET3G by Onsemi is a Zener diode with 12V nominal reference voltage, 5mA test current, and 150 ohm knee impedance. It is ideal for applications requiring precise voltage regulation in automotive electronics, consumer electronics, and industrial equipment.

Median Price

$0.121

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 8,979 parts In-Stock

1+ parts

$0.210

100+ parts

$0.081

1k+ parts

$0.052

10k+ parts

$0.036

8,979

$0.210

$0.081

$0.052

$0.036

Rochester

USA . 11,015 parts In-Stock

1+ parts

-

100+ parts

$0.032

1k+ parts

$0.026

10k+ parts

$0.023

11,015

-

$0.032

$0.026

$0.023

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 779 parts In-Stock

1+ parts

$0.025

100+ parts

-

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779

$0.025

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Flip Electronics

USA . 600,000 parts In-Stock

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NAC Semi

USA . 20,000 parts In-Stock

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$0.118

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$0.118

Bristol Electronics

USA . 11,787 parts In-Stock

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11,787

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Atlantic Semiconductor

USA . 11,787 parts In-Stock

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11,787

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Chip Stock

USA . 5,400 parts In-Stock

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5,400

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Vyrian

USA . 1,903 parts In-Stock

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1,903

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Distributors (Availability)

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Corphita

USA . 111 parts In-Stock

1+ parts

$0.023

100+ parts

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111

$0.023

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Corohmni

South Africa . 493 parts In-Stock

1+ parts

$0.026

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493

$0.026

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AZTECH Wire

Italy . 77 parts In-Stock

1+ parts

$13.090

100+ parts

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77

$13.090

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QUARKTWIN TECHNOLOGY LTD

USA . 9,448 parts In-Stock

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Problanco Electronics

Mexico . 7,777 parts In-Stock

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7,777

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Kulean Microsystems

USA . 6,053 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,042 parts In-Stock

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6,042

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Kepictronics

USA . 4,400 parts In-Stock

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4,400

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Metaverse IC Inc.

Canada . 3,900 parts In-Stock

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3,900

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SupplyDigital Components

Austria . 1,496 parts In-Stock

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1,496

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UHIMA Technologies

Türkiye . 591 parts In-Stock

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591

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TANS Electronics

Latvia . 328 parts In-Stock

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328

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Overview

Discover the reliability and precision of the SZBZX84C12ET3G Zener Diode by Onsemi. Built with cutting-edge technology and manufactured by a trusted industry leader, this component ensures optimal performance and longevity. Ideal for a wide range of applications, this Zener Diode offers customers unparalleled value and benefits, providing stable voltage regulation and protection against electrical surges. Upgrade your electronic devices with this high-quality solution and experience enhanced efficiency and durability like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability, making it suitable for various applications.

Working Test Current: 5 mA

With a working test current of 5 mA, this zener diode can effectively regulate voltage within the specified range.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on PCBs, saving space and simplifying assembly.

Maximum Reverse Current: 0.1 uA

The low maximum reverse current of 0.1uA ensures minimal leakage and ensures efficient operation.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this zener diode can withstand high temperatures without compromising performance.

Maximum Power Dissipation: 0.25 W

The maximum power dissipation of 0.25W indicates the ability of this zener diode to handle power efficiently and prevent overheating.

Technical Specifications

Zener Diodes SZBZX84C12ET3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

25 ohm

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Maximum Knee Impedance:

150 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

AEC-Q101; UL RECOGNIZED

Nominal Reference Voltage:

12 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

8 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5.39 %

Working Test Current:

5 mA

Trade Compliance

SZBZX84C12ET3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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