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SURHD8560W1T4G

Onsemi

SURHD8560W1T4G by Onsemi

SURHD8560W1T4G by Onsemi is a single diode with ultra-fast recovery power for applications requiring high-speed performance. It features a max reverse recovery time of 0.03 us, max forward voltage of 2.7 V, and max output current of 5 A. Ideal for use in electronics operating b/w -65 to 175 °C, this rectifier diode has a peak repetitive reverse voltage of 600 V and matte tin terminal finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Avnet

USA . 12,500 parts In-Stock

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EBV Elektronik

Germany . 5,000 parts In-Stock

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5,000

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Chip Stock

USA . 16,000 parts In-Stock

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Vyrian

USA . 9,646 parts In-Stock

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Digiode

USA . 2,281 parts In-Stock

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Ampacity Inc.

Singapore . 8,615 parts In-Stock

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$3.010

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$3.010

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AZTECH Wire

Italy . 451 parts In-Stock

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$8.450

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451

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Perfect Parts

USA . 15,669 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 7,898 parts In-Stock

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Kulean Microsystems

USA . 7,729 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Corphita

USA . 2,105 parts In-Stock

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Problanco Electronics

Mexico . 1,176 parts In-Stock

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UHIMA Technologies

Türkiye . 630 parts In-Stock

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Corohmni

South Africa . 438 parts In-Stock

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TANS Electronics

Latvia . 17 parts In-Stock

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Overview

Experience the exceptional quality and reliability of Onsemi with the SURHD8560W1T4G diode. Designed for ultra-fast recovery power applications, this rectifier diode offers a maximum output current of 5A and a maximum forward voltage of 2.7V. With a small outline package style and matte tin terminal finish, this diode provides superior performance in a compact design. Trust Onsemi's expertise in diodes and rectifiers to deliver value and efficiency for your electronic projects. Upgrade to the SURHD8560W1T4G today and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-lasting performance.

Config: SINGLE

Simplifies the circuit design and makes installation easier.

Surface Mount: YES

Allows for easy and efficient PCB assembly.

Maximum Reverse Recovery Time: 0.03 us

Ensures fast switching speed for efficient performance.

Maximum Reverse Current: 10 uA

Low reverse current minimizes power losses and improves efficiency.

Terminal Finish: MATTE TIN

Provides good solderability for reliable connections.

Diode Type: RECTIFIER DIODE

Suitable for power applications requiring rectification.

Maximum Forward Voltage (VF): 2.7 V

Low forward voltage drop helps reduce power loss.

Maximum Output Current: 5 A

Capable of handling high current loads.

Maximum Repetitive Peak Reverse Voltage: 600 V

Suitable for voltage regulation and rectification in various applications.

Technical Specifications

Diodes & Rectifiers SURHD8560W1T4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.7 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SURHD8560W1T4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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