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SURHD8560T4G

Onsemi

SURHD8560T4G by Onsemi

SURHD8560T4G by Onsemi is a single rectifier diode with ultra-fast recovery power. It has a max reverse recovery time of 0.03 us and can handle a max output current of 5A. Ideal for applications requiring high-speed switching capabilities in temperatures ranging from -65 to 175 °C.

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Overview

Discover the SURHD8560T4G by Onsemi, a top-quality diode & rectifier that offers ultra-fast recovery power in a compact small outline package. Manufactured with precision and expertise by Onsemi, this product delivers exceptional performance with a maximum output current of 5A and a maximum repetitive peak reverse voltage of 600V. Ideal for a wide range of applications, this rectifier diode is designed to operate efficiently at temperatures ranging from -65 °C to 175°C. Experience reliable and high-performance power solutions with the SURHD8560T4G, bringing value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection to the diode, making it suitable for various applications.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it easier to integrate into different systems.

Surface Mount: YES

The surface mount feature allows for convenient and space-saving installation on PCBs.

Maximum Reverse Recovery Time: 0.03 us

The ultra-fast reverse recovery time ensures efficient and quick switching of the diode, making it ideal for high-speed applications.

Maximum Reverse Current: 10 uA

The low reverse current helps in minimizing power losses and improving overall efficiency of the circuit.

Package Shape: RECTANGULAR

The rectangular shape offers easy handling and placement, enhancing the usability of the diode.

Application: ULTRA FAST RECOVERY POWER

Designed for ultra-fast recovery power applications, this diode is suitable for tasks that require quick response times.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand demanding environmental conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows the diode to function efficiently even in extreme cold conditions.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and corrosion resistance, ensuring a reliable connection.

Terminal Position: SINGLE

The single terminal position simplifies the installation process and enhances the overall reliability of the diode.

Case Connection: CATHODE

The cathode case connection ensures proper polarity and helps in easy identification during installation.

Maximum Repetitive Peak Reverse Voltage: 600 V

With a high maximum repetitive peak reverse voltage, this diode can handle high voltage applications with ease.

Diode Element Material: SILICON

Silicon diode elements are known for their reliability and stability, making this diode a durable choice for various applications.

Technical Specifications

Diodes & Rectifiers SURHD8560T4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.7 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SURHD8560T4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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