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SPI505

Onsemi

SPI505 by Onsemi

The Onsemi SPI505 is a Schmitt Trigger optoelectronic device with max. on-state voltage of 16V and response time of 0.15μs. It operates b/w -25 °C to 80°C, ideal for through-hole mounting in applications requiring a gap size of 3mm and max. on-state current of 15mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 426 parts In-Stock

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Vyrian

USA . 381 parts In-Stock

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Kulean Microsystems

USA . 4,789 parts In-Stock

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Problanco Electronics

Mexico . 3,072 parts In-Stock

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SupplyDigital Components

Austria . 2,383 parts In-Stock

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TANS Electronics

Latvia . 1,697 parts In-Stock

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Corphita

USA . 786 parts In-Stock

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UHIMA Technologies

Türkiye . 104 parts In-Stock

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Corohmni

South Africa . 74 parts In-Stock

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Overview

Enhance your product designs with the SPI505 by Onsemi, a reliable and high-quality optoelectronic component. Manufactured by Onsemi, a trusted industry leader, this Schmitt Trigger offers rapid response times and precise functionality. Ideal for a variety of applications, this Through Hole Mount device provides exceptional value and performance. Elevate your projects with the SPI505 and experience the benefits of superior quality and innovation.

Feature Benefit Bullets

Maximum On State Voltage: 16 V

The high maximum voltage allows for compatibility with various electrical systems and applications.

Output Circuit Type: Schmitt Trigger

Schmitt Trigger output circuit provides hysteresis and noise immunity, ensuring reliable and stable operation.

Maximum Operating Temperature: 80 °C

The high maximum operating temperature allows for use in a wide range of environments without risking damage.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature ensures functionality even in cold conditions.

Maximum Response Time: 0.00000015 s

The extremely fast response time ensures rapid and precise signal processing.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature offers easy and secure installation.

Gap Size: 3 mm

The 3mm gap size allows for optimal performance in various applications.

Maximum On State Current: 0.015 A

The high maximum on-state current enables the product to handle demanding electrical loads.

Technical Specifications

Other Function Optoelectronics SPI505 attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Gap Size:

3 mm

Mounting Feature:

Maximum On State Current:

.015 A

Maximum On State Voltage:

16 V

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Output Circuit Type:

Schmitt Trigger

Maximum Response Time:

.00000015 s

Sub-Category:

Other Optoelectronics

Trade Compliance

SPI505 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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