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SNRVBD660CTT4G

Onsemi

SNRVBD660CTT4G by Onsemi

SNRVBD660CTT4G by Onsemi is a Schottky rectifier diode with common cathode configuration and 2 elements. It has a max reverse voltage of 60V, forward voltage of 0.9V, and output current of 3A. Ideal for fast recovery power applications with an operating temperature range from -65°C to 175°C.

Median Price

$0.427

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,753 parts In-Stock

1+ parts

$1.360

100+ parts

$0.731

1k+ parts

$0.505

10k+ parts

$0.488

4,753

$1.360

$0.731

$0.505

$0.488

Arrow

USA . 10,000 parts In-Stock

1+ parts

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$0.411

10,000

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$0.411

Verical

USA . 10,000 parts In-Stock

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$0.411

10,000

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$0.411

Chip1Stop

Japan . 5,000 parts In-Stock

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$0.443

5,000

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$0.443

Distributors (In-Stock)

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Digiode

USA . 518 parts In-Stock

1+ parts

$1.074

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518

$1.074

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Flip Electronics

USA . 165,104 parts In-Stock

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Chip Stock

USA . 9,000 parts In-Stock

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Vyrian

USA . 7,980 parts In-Stock

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7,980

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Cyclops Electronics Ltd

UK . 2,517 parts In-Stock

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2,517

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NAC Semi

USA . 2,500 parts In-Stock

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$0.716

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$0.716

Nova Conductors

Japan . 300 parts In-Stock

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300

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Bristol Electronics

USA . 170 parts In-Stock

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$1.406

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$0.844

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$1.406

$0.844

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Microfarads

USA . 161 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,597 parts In-Stock

1+ parts

$0.090

100+ parts

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1,597

$0.090

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Ampacity Inc.

Singapore . 7,892 parts In-Stock

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$0.349

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7,892

$0.349

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Semicontronic

India . 6,263 parts In-Stock

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$0.349

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$0.340

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$0.339

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6,263

$0.349

$0.340

$0.339

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Corohmni

South Africa . 488 parts In-Stock

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$0.411

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488

$0.411

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Corphita

USA . 2,225 parts In-Stock

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$1.017

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2,225

$1.017

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Andel Nordic

Denmark . 603 parts In-Stock

1+ parts

$1.230

100+ parts

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$0.858

10k+ parts

$0.858

603

$1.230

-

$0.858

$0.858

Microchip USA

USA . 9,485 parts In-Stock

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$3.289

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9,485

$3.289

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Component Stockers USA

USA . 1,540 parts In-Stock

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$4.090

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$3.890

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$3.760

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1,540

$4.090

$3.890

$3.760

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iodParts Technologies Inc.

India . 600,000 parts In-Stock

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Authorized Procurement Solutions

USA . 22,500 parts In-Stock

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GreenTree Electronics

Israel . 20,000 parts In-Stock

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Kulean Microsystems

USA . 7,724 parts In-Stock

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Perfect Parts

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Problanco Electronics

Mexico . 4,132 parts In-Stock

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SupplyDigital Components

Austria . 3,989 parts In-Stock

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Continental Prestige Electronics

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Lixinc

USA . 3,128 parts In-Stock

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TANS Electronics

Latvia . 2,917 parts In-Stock

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Kepictronics

USA . 2,415 parts In-Stock

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RC Electronics

USA . 2,400 parts In-Stock

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Argo Parts USA

USA . 525 parts In-Stock

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UHIMA Technologies

Türkiye . 228 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Discover the cutting-edge SNRVBD660CTT4G by Onsemi, a top-tier manufacturer in the Diodes & Rectifiers category. This high-quality product boasts a common cathode configuration with 2 elements and a small outline package style. Ideal for fast recovery power applications, this Schottky diode offers a maximum output current of 3A and a low forward voltage of 0.9V. With a wide operating temperature range and AEC-Q101 reference standard, this diode ensures reliability and performance. Elevate your projects with the SNRVBD660CTT4G and experience the value and advantages it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration simplifies circuit design and the 2 elements provide versatility in usage.

Surface Mount: YES

Allows for easy installation on PCBs, saving space and simplifying assembly processes.

Maximum Reverse Current: 100 uA

Low reverse current ensures efficient operation and minimizes power loss.

Package Shape: RECTANGULAR

Rectangular shape enables efficient placement on PCBs and facilitates compact designs.

Reverse Test Voltage: 60 V

Suitable for applications requiring a reverse test voltage of up to 60V.

No. of Terminals: 2

Simple 2-terminal connection for ease of use and integration into circuits.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for high-density mounting.

Application: FAST RECOVERY POWER

Designed for fast recovery power applications, suitable for high-performance electronics.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows for reliable performance in various environments.

Minimum Operating Temperature: -65 °C

Suitable for use in extreme cold conditions without compromising functionality.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and the annealed form ensures reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces wiring complexity.

Case Connection: CATHODE

Cathode case connection facilitates easy polarity identification and installation.

Minimum Breakdown Voltage: 60 V

Safely handles breakdown voltages of up to 60V, protecting the circuit from damage.

Maximum Time At Peak Reflow Temperature (s): 30

Optimal time duration for peak reflow soldering process, ensuring reliable solder joints.

Peak Reflow Temperature °C: 260

Peak reflow temperature for soldering process, ensuring secure attachment to PCB.

Reference Standard: AEC-Q101

Meets automotive grade quality standards, ensuring reliability in automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode design for efficient conversion of AC to DC in power supply applications.

Maximum Forward Voltage (VF): 0.9 V

Low forward voltage drop of 0.9V minimizes power dissipation and improves efficiency.

Maximum Output Current: 3 A

Capable of handling high output currents up to 3A, suitable for power applications.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage, ideal for high-frequency applications.

Terminal Form: GULL WING

Gull wing terminal form for easy surface mounting and reliable electrical connections.

No. of Elements: 2

Two elements in the diode provide redundancy and flexibility in circuit design.

Maximum Repetitive Peak Reverse Voltage: 60 V

Can withstand repetitive peak reverse voltages of up to 60V, ensuring durability and reliability.

Maximum Non Repetitive Peak Forward Current: 75 A

Capable of handling high non-repetitive peak forward currents up to 75A, suitable for power surge protection.

Diode Element Material: SILICON

Silicon diode element material provides high conductivity and reliability in various applications.

Technical Specifications

Diodes & Rectifiers SNRVBD660CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY POWER

Minimum Breakdown Voltage:

60 V

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

100 uA

Reverse Test Voltage:

60 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SNRVBD660CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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