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SMF24CT1

Onsemi

SMF24CT1 by Onsemi

SMF24CT1 by Onsemi is a Trans Voltage Suppressor Diode with 5 elements in common anode configuration. It has a max non-repetitive peak reverse power dissipation of 100W and breakdown voltage of 29.3V. Ideal for applications requiring transient suppression in electronic circuits.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 46,500 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

46,500

-

$0.066

$0.055

$0.049

DigiKey

USA . 46,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.080

46,500

-

-

-

$0.080

Verical

USA . 46,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

46,500

-

-

-

$0.061

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 847 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

10k+ parts

-

847

$0.051

-

-

-

Chip Stock

USA . 32,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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32,000

-

-

-

-

Vyrian

USA . 5,736 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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5,736

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 130 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

-

10k+ parts

-

130

$0.049

-

-

-

Corohmni

South Africa . 175 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

10k+ parts

-

175

$0.051

-

-

-

AZTECH Wire

Italy . 279 parts In-Stock

1+ parts

$14.030

100+ parts

-

1k+ parts

-

10k+ parts

-

279

$14.030

-

-

-

Continental Prestige Electronics

USA . 46,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.046

10k+ parts

-

46,500

-

-

$0.046

-

Problanco Electronics

Mexico . 7,202 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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7,202

-

-

-

-

Kulean Microsystems

USA . 4,369 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,369

-

-

-

-

TANS Electronics

Latvia . 1,582 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,582

-

-

-

-

SupplyDigital Components

Austria . 919 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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919

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UHIMA Technologies

Türkiye . 688 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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10k+ parts

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688

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-

-

-

Overview

Enhance your electronic devices with the high-quality SMF24CT1 transient suppression device by Onsemi. Designed with precision and reliability in mind, this product offers superior protection against voltage spikes and surges, ensuring the longevity of your equipment. Ideal for a wide range of applications, from consumer electronics to industrial machinery, the SMF24CT1 guarantees peace of mind and uninterrupted performance. Trust Onsemi's expertise in semiconductor technology and invest in the best for your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection to the internal components, ensuring a longer lifespan for the product.

Config: COMMON ANODE, 5 ELEMENTS

The common anode configuration with 5 elements allows for efficient transient suppression by providing multiple paths for current to flow, enhancing the overall effectiveness of the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 100 W

With a high maximum non-repetitive peak reverse power dissipation of 100 W, this device can handle sudden spikes in voltage without being damaged, ensuring reliable protection for connected components.

Nominal Breakdown Voltage: 29.3 V

The nominal breakdown voltage of 29.3 V ensures that the device activates at the specified voltage level, providing consistent protection against transient voltage surges.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy installation and mounting in various applications, making it convenient to use in different electronic devices.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures fast response times and high clamping voltages, effectively suppressing transient voltage spikes and protecting connected components.

Technical Specifications

Transient Suppression Devices SMF24CT1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

26.7 V

Nominal Breakdown Voltage:

29.3 V

Maximum Clamping Voltage:

44 V

Config:

COMMON ANODE, 5 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

100 W

No. of Elements:

5

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

24 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SMF24CT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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